High-resolution SILC measurements of thin SiO2 ultra low voltages

Abstract

In order to study in detail the kinetics of degradation at ultra low voltages, close to real life operating condition, SILC on ultra-thin SiO2 oxides was measured in-situ by using a high-resolution measurement technique. A large gate stress voltage range was measured from -3.1 V down to -1.5 V with a step of 0.2 V. Although the SILC-curves at low voltages show a different behaviour, no significant change in the degradation mechanisms could be observed proving that extrapolations of high voltage measurements to operating voltage are indeed possible, provided that the correct extrapolation model is used. (C) 2002 Elsevier Science Ltd. All rights reserved.