Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/27914
Title: Wet processing in state-of-the-art Cu(In,Ga)(S,Se)2 thin film solar cells
Authors: BULDU KOHL, Dilara 
DE WILD, Jessica 
KOHL, Thierry 
Suresh, Sunil
BIRANT, Gizem 
BRAMMERTZ, Guy 
MEURIS, Marc 
POORTMANS, Jef 
VERMANG, Bart 
Issue Date: 2018
Source: Solid State Phenomena, 282, p. 300-305
Abstract: Interface quality plays a key role in solar cell applications. Interface recombination at the front and rear surfaces, which determine this quality, have significant effects on open circuit voltage and fill factor values. In this work, several surface treatments were applied on Cu(In,Ga)Se2 (CIGS) surfaces to improve the interface quality. Besides, the passivation layer implementation was investigated to reduce interface recombination between the buffer and absorber layers.
Keywords: Photovoltaic; PV; thin film; CIGS; wet processing; surface cleaning and etching; passivation
Document URI: http://hdl.handle.net/1942/27914
ISSN: 1012-0394
DOI: 10.4028/www.scientific.net/SSP.282.300
Rights: All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of Trans Tech Publications, www.scientific.net. (#109163089, Institute for Material Research (IMO), Hasselt Univesity, Diepenbeek, Belgium-13/08/18,11:45:45)
Category: A2
Type: Journal Contribution
Appears in Collections:Research publications

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