Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/42789
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dc.contributor.authorPARION, Jonathan-
dc.contributor.authorSCAFFIDI, Romain-
dc.contributor.authorDUERINCKX, Filip-
dc.contributor.authorSIVARAMAKRISHNAN RADHAKRISHNAN, Hariharsudan-
dc.contributor.authorFlandre, Denis-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorVERMANG, Bart-
dc.date.accessioned2024-04-18T12:23:43Z-
dc.date.available2024-04-18T12:23:43Z-
dc.date.issued2024-
dc.date.submitted2024-04-03T08:50:18Z-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 124 (14) (Art N° 142901)-
dc.identifier.urihttp://hdl.handle.net/1942/42789-
dc.language.isoen-
dc.publisher-
dc.titleComparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor-
dc.typeJournal Contribution-
dc.identifier.issue14-
dc.identifier.volume124-
local.bibliographicCitation.jcatA1-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr142901-
dc.identifier.doi10.1063/5.0203484-
local.provider.typeCrossRef-
local.uhasselt.internationalno-
item.contributorPARION, Jonathan-
item.contributorSCAFFIDI, Romain-
item.contributorDUERINCKX, Filip-
item.contributorSIVARAMAKRISHNAN RADHAKRISHNAN, Hariharsudan-
item.contributorFlandre, Denis-
item.contributorPOORTMANS, Jef-
item.contributorVERMANG, Bart-
item.fullcitationPARION, Jonathan; SCAFFIDI, Romain; DUERINCKX, Filip; SIVARAMAKRISHNAN RADHAKRISHNAN, Hariharsudan; Flandre, Denis; POORTMANS, Jef & VERMANG, Bart (2024) Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor. In: APPLIED PHYSICS LETTERS, 124 (14) (Art N° 142901).-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
Appears in Collections:Research publications
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