Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3178
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dc.contributor.authorFe, L-
dc.contributor.authorWouters, DJ-
dc.contributor.authorNorga, G-
dc.contributor.authorMaes, HE-
dc.contributor.authorGnappi, G-
dc.contributor.authorMontenero, A-
dc.date.accessioned2007-11-27T08:29:45Z-
dc.date.available2007-11-27T08:29:45Z-
dc.date.issued1998-
dc.identifier.citationINTEGRATED FERROELECTRICS, 22(1-4). p. 555-563-
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/1942/3178-
dc.description.abstractPZT and PLZT precursor solutions were prepared by a sol-gel route, varying the Zr/Ti ratio and the La doping level. They were characterized by TGA coupled with FT-IR. Reactions taking place during heat treatments are discussed. Composition of PZT and PLZT thin films was measured by RES and their orientation determined by XRD. Ferroelectric capacitors with Pt electrodes were characterized by hysteresis and fatigue measurements.-
dc.language.isoen-
dc.publisherGORDON BREACH SCI PUBL LTD-
dc.subject.othersol-gel; PZT precursor; lanthanum doping; composition-
dc.titlePLZT: Precursor characterization and ferroelectric properties-
dc.typeJournal Contribution-
dc.identifier.epage563-
dc.identifier.issue1-4-
dc.identifier.spage555-
dc.identifier.volume22-
local.format.pages9-
dc.description.notesIMEC, Louvain, Belgium. Limburgs Univ Ctr, Lab Inorgan & Phys Chem, Diepenbeek, Belgium. Univ Parma, I-43100 Parma, Italy.Fe, L, IMEC, Kapeldreef 75, Louvain, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.isi000076544300005-
item.contributorFe, L-
item.contributorWouters, DJ-
item.contributorNorga, G-
item.contributorMaes, HE-
item.contributorGnappi, G-
item.contributorMontenero, A-
item.validationecoom 1999-
item.accessRightsClosed Access-
item.fullcitationFe, L; Wouters, DJ; Norga, G; Maes, HE; Gnappi, G & Montenero, A (1998) PLZT: Precursor characterization and ferroelectric properties. In: INTEGRATED FERROELECTRICS, 22(1-4). p. 555-563.-
item.fulltextNo Fulltext-
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