Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/10293
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dc.contributor.authorSmeets, D.-
dc.contributor.authorVANHOYLAND, Geert-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorVantomme, A.-
dc.date.accessioned2010-01-07T15:06:24Z-
dc.date.available2010-01-07T15:06:24Z-
dc.date.issued2009-
dc.identifier.citationJOURNAL OF PHYSICS D-APPLIED PHYSICS, 42(23)-
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/1942/10293-
dc.description.abstractWe have accurately determined the thermal expansion coefficients of CoSi2 and NiSi2 using high-temperature x-ray diffraction in the temperature range 300-850 K, resolving the ambiguity in the values reported in the literature. The room temperature (298 K) linear thermal expansion coefficients (alpha = (1/a(0))(partial derivative a/partial derivative T)) for CoSi2 and NiSi2 are found to be alpha CoSi2 = 14.4 +/- 0.6 x 10(-6)K(-1) and alpha(NiSi2) = 14.4 +/- 0.7 x 10(-6) K-1, respectively. Our results, however, strongly suggest that the thermal expansion coefficient of NiSi2 is temperature dependent and we recommend to use alpha(NiSi2) (T) = [(14.3 +/- 0.5) + (0.006 +/- 0.002) (T - 273K)] x 10(-6) K-1 whenever an accurate value of the NiSi2 thermal expansion coefficient is needed.-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.titleOn the thermal expansion coefficient of CoSi2 and NiSi2-
dc.typeJournal Contribution-
dc.identifier.issue23-
dc.identifier.volume42-
local.format.pages7-
local.bibliographicCitation.jcatA1-
dc.description.notes[Smeets, D.; Vantomme, A.] Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium. [Smeets, D.; Vantomme, A.] Katholieke Univ Leuven, INPAC, B-3001 Louvain, Belgium. [Vanhoyland, G.; D'Haen, J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Vanhoyland, G.; D'Haen, J.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1088/0022-3727/42/23/235402-
dc.identifier.isi000271855000033-
item.fulltextNo Fulltext-
item.contributorSmeets, D.-
item.contributorVANHOYLAND, Geert-
item.contributorD'HAEN, Jan-
item.contributorVantomme, A.-
item.fullcitationSmeets, D.; VANHOYLAND, Geert; D'HAEN, Jan & Vantomme, A. (2009) On the thermal expansion coefficient of CoSi2 and NiSi2. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 42(23).-
item.accessRightsClosed Access-
item.validationecoom 2010-
crisitem.journal.issn0022-3727-
crisitem.journal.eissn1361-6463-
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