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Title: | Atomic Layer Deposition of Gd-Doped HfO2 Thin Films | Authors: | Adelmann, C. Tielens, H. DEWULF, Daan HARDY, An Pierreux, D. Swerts, J. Rosseel, E. Shi, X. VAN BAEL, Marlies Kittl, J. A. Van Elshocht, S. |
Issue Date: | 2010 | Publisher: | ELECTROCHEMICAL SOC INC | Source: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(4). p. G105-G110 | Abstract: | GdxHf1-xOy thin films were deposited by atomic layer deposition (ALD) using tris(isopropyl-cyclopentadienyl) gadolinium [Gd((PrCp)-Pr-i)(3)] and HfCl4 in combination with H2O as an oxidizer. Growth curves showed a nearly ideal ALD behavior. The growth per individual Gd((PrCp)-Pr-i)(3)/H2O or HfCl4/H2O cycle was 0.55 A degrees, independent of the Gd/(Gd+Hf) composition x in the studied range. This indicates that the amount of HfO2 deposited during a HfCl4/H2O cycle was essentially identical to the amount of Gd2O3 deposited during a Gd((PrCp)-Pr-i)(3)/H2O cycle, assuming identical atomic densities of the films independent of composition. The crystallization of GdxHf1-xOy with Gd/(Gd+Hf) contents x between 7 and 30% was studied. Films with x greater than or similar to 10% crystallized into a cubic/tetragonal HfO2-like phase during spike or laser annealing up to 1300 degrees C, demonstrating that the cubic/tetragonal phase is thermally stable in this temperature range. A maximum dielectric constant of kappa similar to 36 was found for a Gd/(Gd+Hf) concentration of x similar to 11%. | Notes: | [Adelmann, C.; Tielens, H.; Swerts, J.; Rosseel, E.; Shi, X.; Kittl, J. A.; Van Elshocht, S.] IMEC, B-3001 Louvain, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Pierreux, D.] ASM Belgium, B-3001 Louvain, Belgium. christoph.adelmann@imec.be | Keywords: | annealing; atomic layer deposition; crystallisation; dielectric thin films; gadolinium; hafnium compounds; permittivity; thermal stability | Document URI: | http://hdl.handle.net/1942/10805 | ISSN: | 0013-4651 | e-ISSN: | 1945-7111 | DOI: | 10.1149/1.3301663 | ISI #: | 000275586800068 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2011 |
Appears in Collections: | Research publications |
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