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Title: | Stress in (110)-textured phosphorus-doped polycrystalline diamond studied by Raman and cathodoluminescence spectroscopies | Authors: | Habka, N. Barjon, Julien LAZEA, Andrada HAENEN, Ken |
Issue Date: | 2010 | Publisher: | AMER INST PHYSICS | Source: | JOURNAL OF APPLIED PHYSICS, 107(10) | Abstract: | In this work, we investigate the stress developed in phosphorus-doped layers grown on (110)-textured polycrystalline diamond templates. To that end, we follow the shifts of the diamond Raman diffusion and the exciton recombination energies by Raman and cathodoluminescence spectroscopies, respectively. With each approach, a high tensile strain of several gigapascal is evidenced. Moreover, Raman mapping performed in cross section shows (i) at the grain boundaries, a strain in tension that propagates along the growth direction from the template to the deposited layer and (ii) at the center of each grain, a tensile strain of the phosphorus-doped layer with respect to the underlying undoped grain. Concerning the second, we observe also an increase in strain effects at high phosphorus incorporation, together with a structural degradation. The possible origins of such high lattice deformation of phosphorus-doped layers are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428452] | Notes: | [Habka, N.; Barjon, J.] Univ Versailles St Quentin, CNRS, GEMaC, F-92195 Meudon, France. [Lazea, A.; Haenen, K.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Lazea, A.; Haenen, K.] IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. nada.habka@cnrs-bellevue.fr | Document URI: | http://hdl.handle.net/1942/10973 | ISSN: | 0021-8979 | e-ISSN: | 1089-7550 | DOI: | 10.1063/1.3428452 | ISI #: | 000278182400056 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2011 |
Appears in Collections: | Research publications |
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