Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/10999
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Pernot, J. | - |
dc.contributor.author | VOLPE, Pierre-Nicolas | - |
dc.contributor.author | Omnes, F. | - |
dc.contributor.author | Muret, P. | - |
dc.contributor.author | MORTET, Vincent | - |
dc.contributor.author | HAENEN, Ken | - |
dc.contributor.author | Teraji, T. | - |
dc.date.accessioned | 2010-07-08T12:07:10Z | - |
dc.date.available | NO_RESTRICTION | - |
dc.date.available | 2010-07-08T12:07:10Z | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | PHYSICAL REVIEW B, 81(20) | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/1942/10999 | - |
dc.description.abstract | Hall hole mobility of boron-doped homoepitaxial (100) diamond samples has been investigated in the temperature range of 100-900 K, both experimentally and theoretically. The temperature dependence of the mobility measured in high-quality and low boron-doped materials was compared with theoretical calculations to determine the phonon-hole coupling constants (deformation potential for acoustic phonons and coupling constant for optical phonons). The maximum hole mobility is found to be close to 2000 cm(2)/Vs at room temperature. For boron-doped material, the hole scattering by neutral boron atoms is shown to be important in diamond due to the high ionization energy of the boron acceptor. The doping dependence of the Hall hole mobility is established for boron-doping levels ranging between 10(14) and 10(20) cm(-3) at 300 and 500 K. The physical reasons which make diamond a semiconductor with a higher mobility than other semiconductors of column IV are discussed. | - |
dc.description.sponsorship | This work was financially supported by the Research Program "Deltadiam" (Grant No. ANR-BLAN08-3-349825) from French Agence Nationale de la Recherche (ANR) and the Research Programs G.0068.07 and G.0430.07 of the Research Foundation-Flanders (FWO), the Methusalem "NANO network Antwerp-Hasselt," and the IAP-P6/42 project Quantum Effects in Clusters and Nanowires. | - |
dc.language.iso | en | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Hall hole mobility in boron-doped homoepitaxial diamond | - |
dc.type | Journal Contribution | - |
dc.identifier.issue | 20 | - |
dc.identifier.volume | 81 | - |
local.format.pages | 7 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Pernot, J.; Volpe, P. N.; Omnes, F.; Muret, P.] CNRS, Inst NEEL, F-38042 Grenoble 9, France. [Pernot, J.; Volpe, P. N.; Omnes, F.; Muret, P.] Univ Grenoble 1, F-38042 Grenoble, France. [Mortet, V.; Haenen, K.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Mortet, V.; Haenen, K.] IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Teraji, T.] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan. julien.pernot@grenoble.cnrs.fr | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1103/PhysRevB.81.205203 | - |
dc.identifier.isi | 000278144500041 | - |
item.fulltext | No Fulltext | - |
item.contributor | Pernot, J. | - |
item.contributor | VOLPE, Pierre-Nicolas | - |
item.contributor | Omnes, F. | - |
item.contributor | Muret, P. | - |
item.contributor | MORTET, Vincent | - |
item.contributor | HAENEN, Ken | - |
item.contributor | Teraji, T. | - |
item.accessRights | Closed Access | - |
item.fullcitation | Pernot, J.; VOLPE, Pierre-Nicolas; Omnes, F.; Muret, P.; MORTET, Vincent; HAENEN, Ken & Teraji, T. (2010) Hall hole mobility in boron-doped homoepitaxial diamond. In: PHYSICAL REVIEW B, 81(20). | - |
item.validation | ecoom 2011 | - |
crisitem.journal.issn | 1098-0121 | - |
Appears in Collections: | Research publications |
SCOPUSTM
Citations
75
checked on Sep 2, 2020
WEB OF SCIENCETM
Citations
112
checked on Apr 4, 2024
Page view(s)
62
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.