Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/11120
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dc.contributor.authorZhang, Gufei-
dc.contributor.authorVanacken, J.-
dc.contributor.authorVan de Vondel, J.-
dc.contributor.authorDecelle, W.-
dc.contributor.authorFritzsche, J.-
dc.contributor.authorMoshchalkov, V. V.-
dc.contributor.authorWillems, B.L.-
dc.contributor.authorJANSSENS, Stoffel-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorWAGNER, Patrick-
dc.date.accessioned2010-09-06T08:29:24Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2010-09-06T08:29:24Z-
dc.date.issued2010-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, 108 (1)-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/1942/11120-
dc.description.abstractThe systematics of the suppression of superconductivity with increasing magnetic field in boron-doped nanocrystalline chemical vapor deposition diamond is studied in a broad temperature range. At the temperature of T-S0 which is above the critical temperature, a plateau is observed in the resistivity versus temperature curve rho(T) taken at zero magnetic field. When a magnetic field of B=B-SN (N=1,2, ... ,5) is applied, the plateau moves to low temperature with the thermoresistivity maximum located at T-SN (N=1,2, ... ,5). The rho(B) curves, measured at different temperatures around T-SN, intersect in the rho-B plane at the field of B=B-SN. By tuning B-SN from 0 to 5 T, a series of plateaus in the rho-T plane and the corresponding intersections in the rho-B plane are observed. The intersections quadratically chain up in the rho-B plane, separating the superconducting from the insulating region. The thermoresistivity maxima exponentially group up in the rho-T plane, thus defining a phase fluctuation zone. The phase boundary, composed of the intersections and separating the superconducting states from the insulating state, is shown to be a generic consequence of granularity. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3437653]-
dc.description.sponsorshipThe authors are grateful for the support of the Belgian IAP, the FWO under Grant No. G.0430.07N, the INPAC Project under Project Nos. EF/05/005 and GOA/09/005, and the Methusalem Funding by the Flemish Government.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleMagnetic field-driven superconductor-insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond-
dc.typeJournal Contribution-
dc.identifier.issue1-
dc.identifier.volume108-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Zhang, Gufei; Vanacken, J.; Van de Vondel, J.; Decelle, W.; Fritzsche, J.; Moshchalkov, V. V.] Katholieke Univ Leuven, INPAC Inst Nanoscale Phys & Chem, B-3001 Louvain, Belgium. [Willems, B. L.] Univ Nacl Mayor San Marcos, Fac Ciencias Fis, Lima 14, Peru. [Janssens, S. D.; Haenen, K.; Wagner, P.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Haenen, K.; Wagner, P.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. gufei.zhang@fys.kuleuven.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1063/1.3437653-
dc.identifier.isi000280000400056-
item.fulltextNo Fulltext-
item.contributorZhang, Gufei-
item.contributorVanacken, J.-
item.contributorVan de Vondel, J.-
item.contributorDecelle, W.-
item.contributorFritzsche, J.-
item.contributorMoshchalkov, V. V.-
item.contributorWillems, B.L.-
item.contributorJANSSENS, Stoffel-
item.contributorHAENEN, Ken-
item.contributorWAGNER, Patrick-
item.accessRightsClosed Access-
item.fullcitationZhang, Gufei; Vanacken, J.; Van de Vondel, J.; Decelle, W.; Fritzsche, J.; Moshchalkov, V. V.; Willems, B.L.; JANSSENS, Stoffel; HAENEN, Ken & WAGNER, Patrick (2010) Magnetic field-driven superconductor-insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond. In: JOURNAL OF APPLIED PHYSICS, 108 (1).-
item.validationecoom 2011-
crisitem.journal.issn0021-8979-
crisitem.journal.eissn1089-7550-
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