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http://hdl.handle.net/1942/11120
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DC Field | Value | Language |
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dc.contributor.author | Zhang, Gufei | - |
dc.contributor.author | Vanacken, J. | - |
dc.contributor.author | Van de Vondel, J. | - |
dc.contributor.author | Decelle, W. | - |
dc.contributor.author | Fritzsche, J. | - |
dc.contributor.author | Moshchalkov, V. V. | - |
dc.contributor.author | Willems, B.L. | - |
dc.contributor.author | JANSSENS, Stoffel | - |
dc.contributor.author | HAENEN, Ken | - |
dc.contributor.author | WAGNER, Patrick | - |
dc.date.accessioned | 2010-09-06T08:29:24Z | - |
dc.date.available | NO_RESTRICTION | - |
dc.date.available | 2010-09-06T08:29:24Z | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, 108 (1) | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/1942/11120 | - |
dc.description.abstract | The systematics of the suppression of superconductivity with increasing magnetic field in boron-doped nanocrystalline chemical vapor deposition diamond is studied in a broad temperature range. At the temperature of T-S0 which is above the critical temperature, a plateau is observed in the resistivity versus temperature curve rho(T) taken at zero magnetic field. When a magnetic field of B=B-SN (N=1,2, ... ,5) is applied, the plateau moves to low temperature with the thermoresistivity maximum located at T-SN (N=1,2, ... ,5). The rho(B) curves, measured at different temperatures around T-SN, intersect in the rho-B plane at the field of B=B-SN. By tuning B-SN from 0 to 5 T, a series of plateaus in the rho-T plane and the corresponding intersections in the rho-B plane are observed. The intersections quadratically chain up in the rho-B plane, separating the superconducting from the insulating region. The thermoresistivity maxima exponentially group up in the rho-T plane, thus defining a phase fluctuation zone. The phase boundary, composed of the intersections and separating the superconducting states from the insulating state, is shown to be a generic consequence of granularity. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3437653] | - |
dc.description.sponsorship | The authors are grateful for the support of the Belgian IAP, the FWO under Grant No. G.0430.07N, the INPAC Project under Project Nos. EF/05/005 and GOA/09/005, and the Methusalem Funding by the Flemish Government. | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Magnetic field-driven superconductor-insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond | - |
dc.type | Journal Contribution | - |
dc.identifier.issue | 1 | - |
dc.identifier.volume | 108 | - |
local.format.pages | 5 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Zhang, Gufei; Vanacken, J.; Van de Vondel, J.; Decelle, W.; Fritzsche, J.; Moshchalkov, V. V.] Katholieke Univ Leuven, INPAC Inst Nanoscale Phys & Chem, B-3001 Louvain, Belgium. [Willems, B. L.] Univ Nacl Mayor San Marcos, Fac Ciencias Fis, Lima 14, Peru. [Janssens, S. D.; Haenen, K.; Wagner, P.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Haenen, K.; Wagner, P.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. gufei.zhang@fys.kuleuven.be | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1063/1.3437653 | - |
dc.identifier.isi | 000280000400056 | - |
item.fulltext | No Fulltext | - |
item.contributor | Zhang, Gufei | - |
item.contributor | Vanacken, J. | - |
item.contributor | Van de Vondel, J. | - |
item.contributor | Decelle, W. | - |
item.contributor | Fritzsche, J. | - |
item.contributor | Moshchalkov, V. V. | - |
item.contributor | Willems, B.L. | - |
item.contributor | JANSSENS, Stoffel | - |
item.contributor | HAENEN, Ken | - |
item.contributor | WAGNER, Patrick | - |
item.fullcitation | Zhang, Gufei; Vanacken, J.; Van de Vondel, J.; Decelle, W.; Fritzsche, J.; Moshchalkov, V. V.; Willems, B.L.; JANSSENS, Stoffel; HAENEN, Ken & WAGNER, Patrick (2010) Magnetic field-driven superconductor-insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond. In: JOURNAL OF APPLIED PHYSICS, 108 (1). | - |
item.accessRights | Closed Access | - |
item.validation | ecoom 2011 | - |
crisitem.journal.issn | 0021-8979 | - |
crisitem.journal.eissn | 1089-7550 | - |
Appears in Collections: | Research publications |
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