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Title: | In/extrinsic granularity in superconducting boron-doped diamond | Authors: | Willems, B. Zhang, G. Vanacken, J. Moshchalkov, V. V. Guillamon, I. Suderow, H. Vieira, S. JANSSENS, Stoffel HAENEN, Ken WAGNER, Patrick |
Issue Date: | 2010 | Publisher: | ELSEVIER SCIENCE BV | Source: | PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 470(19). p. 853-856 | Abstract: | When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-xBx diamond:B can exhibit an insulator-to-metal transition (p(Mott) similar to 2 x 10(20) cm(-3)). Under even heavier boron doping (n(B) similar to 10(21) cm(-3)) diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures T-C below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance. (C) 2010 Elsevier B.V. All rights reserved. | Notes: | [Willems, B. L.; Zhang, G.; Vanacken, J.; Moshchalkov, V. V.] Katholieke Univ Leuven, INPAC Inst Nanoscale Phys & Chem, B-3001 Heverlee, Belgium. [Willems, B. L.] Univ Nacl Mayor San Marcos, Fac Ciencias Fis, Lima 14, Peru. [Guillamon, I.; Suderow, H.; Vieira, S.] Univ Autonoma Madrid, Dept Fis Mat Condensada, Lab Bajas Temp, E-28049 Madrid, Spain. [Janssens, S. D.; Haenen, K.; Wagner, P.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Haenen, K.; Wagner, P.] IMEC vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. johan.vanacken@fys.kuleuven.be | Keywords: | Boron doped diamond films; Superconductor-insulator transition; Granular films;Boron doped diamond films; Superconductor-insulator transition; Granular films | Document URI: | http://hdl.handle.net/1942/11304 | ISSN: | 0921-4534 | e-ISSN: | 1873-2143 | DOI: | 10.1016/j.physc.2010.02.080 | ISI #: | 000282454400034 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2011 |
Appears in Collections: | Research publications |
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