Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/11315
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dc.contributor.authorMalinauskas, T.-
dc.contributor.authorJarasiunas, K.-
dc.contributor.authorIvakin, E.-
dc.contributor.authorTranchant, N.-
dc.contributor.authorNESLADEK, Milos-
dc.date.accessioned2010-11-10T08:53:20Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2010-11-10T08:53:20Z-
dc.date.issued2010-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(9). p. 2058-2063-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/1942/11315-
dc.description.abstractWe report on a contactless, all-optical study of carrier diffusion and recombination kinetics in single-crystalline diamond layers using the light-induced transient grating (LITG) technique. Decay times of transient diffraction grating yielded carrier lifetime of tau(R) approximate to 3 ns and bipolar diffusion coefficient D-a = 12 cm(2)/s at 300 K. The latter value of D-a was found to be 4-5 times lower than the ambipolar diffusivity based on electron and hole mobilities, measured by photo-electrical time-of-flight (ToF) technique. This discrepancy was attributed to the bandgap renormalization at high excess carrier densities and its impact on carrier diffusion. The significant decrease of low temperature diffusivity pointed out to a contribution of many-body effects which are tentatively attributed to the formation of electron-hole liquid (EHL) at T < 150 K. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.description.sponsorshipThe authors thank Philippe Bergonzo from CEA-LIST (France) for the sample provision, European project I3HP JRA11 NORHDIA (Project# RII3-CT-2004-506078) and Wim Deferme and Ken Haenen from University of Hasselt for fruitful discussions and ToF measurements.-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subject.othercarrier diffusion; diamond; LITG; recombination-
dc.subject.othercarrier diffusion; diamond; LITG; recombination-
dc.titleDetermination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique-
dc.typeJournal Contribution-
dc.identifier.epage2063-
dc.identifier.issue9-
dc.identifier.spage2058-
dc.identifier.volume207-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notes[Malinauskas, T.; Jarasiunas, K.] Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania. [Ivakin, E.] Natl Acad Sci, Inst Phys, Minsk 220072, Byelarus. [Tranchant, N.; Nesladek, M.] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France. [Nesladek, M.] Hasselt Univ, Inst Mat Res, IMOMEC Div IMEC, B-3590 Diepenbeek, Belgium. tadas.malinauskas@ff.vu.lt-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1002/pssa.201000100-
dc.identifier.isi000282766100010-
item.fulltextWith Fulltext-
item.accessRightsRestricted Access-
item.contributorJarasiunas, K.-
item.contributorNESLADEK, Milos-
item.contributorMalinauskas, T.-
item.contributorIvakin, E.-
item.contributorTranchant, N.-
item.fullcitationMalinauskas, T.; Jarasiunas, K.; Ivakin, E.; Tranchant, N. & NESLADEK, Milos (2010) Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(9). p. 2058-2063.-
item.validationecoom 2011-
crisitem.journal.issn1862-6300-
crisitem.journal.eissn1862-6319-
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