Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/11862
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dc.contributor.authorSwerts, J.-
dc.contributor.authorGIELIS, Sven-
dc.contributor.authorVereecke, G.-
dc.contributor.authorHARDY, An-
dc.contributor.authorDEWULF, Daan-
dc.contributor.authorAdelmann, C.-
dc.contributor.authorVAN BAEL, Marlies-
dc.contributor.authorVan Elshocht, S.-
dc.date.accessioned2011-04-12T08:26:21Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2011-04-12T08:26:21Z-
dc.date.issued2011-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 98(10)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/11862-
dc.description.abstractWe have studied the effect of air exposure on lanthanum aluminates (LaAlOx) deposited by atomic layer deposition. Fourier transform infrared spectroscopy and thermal desorption spectroscopy of as-deposited LaAlOx showed that H2O is absorbed during air exposure and that the amount of absorbed H2O increases with increasing La atomic percent. C was found to be incorporated already during deposition in the form of carbonates. H2O and CO2 are outgassed during postdeposition annealing in an inert atmosphere. After a 700 degrees C postdeposition anneal, the LaAlOx becomes resistant against H2O absorption due to film densification. Alternatively, in situ capping of the LaAlOx with a similar to 2 nm thin Al2O3 film protects the LaAlOx against H2O absorption, but it also hinders the outgassing of the C contaminants during a postdeposition anneal. (C) 2011 American Institute of Physics. [doi:10.1063/1.3557501]-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleStabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping-
dc.typeJournal Contribution-
dc.identifier.issue10-
dc.identifier.volume98-
local.format.pages3-
local.bibliographicCitation.jcatA1-
dc.description.notes[Swerts, J.; Gielis, S.; Vereecke, G.; Adelmann, C.; Van Elshocht, S.] IMEC VZW, B-3001 Louvain, Belgium. [Gielis, S.] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium. [Hardy, A.; Dewulf, D.; Van Bael, M. K.] Hasselt Univ, IMO, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Hardy, A.; Dewulf, D.; Van Bael, M. K.] Hasselt Univ, IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1063/1.3557501-
dc.identifier.isi000288277200058-
item.fulltextNo Fulltext-
item.contributorSwerts, J.-
item.contributorGIELIS, Sven-
item.contributorVereecke, G.-
item.contributorHARDY, An-
item.contributorDEWULF, Daan-
item.contributorAdelmann, C.-
item.contributorVAN BAEL, Marlies-
item.contributorVan Elshocht, S.-
item.fullcitationSwerts, J.; GIELIS, Sven; Vereecke, G.; HARDY, An; DEWULF, Daan; Adelmann, C.; VAN BAEL, Marlies & Van Elshocht, S. (2011) Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping. In: APPLIED PHYSICS LETTERS, 98(10).-
item.accessRightsClosed Access-
item.validationecoom 2012-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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