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http://hdl.handle.net/1942/11862
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DC Field | Value | Language |
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dc.contributor.author | Swerts, J. | - |
dc.contributor.author | GIELIS, Sven | - |
dc.contributor.author | Vereecke, G. | - |
dc.contributor.author | HARDY, An | - |
dc.contributor.author | DEWULF, Daan | - |
dc.contributor.author | Adelmann, C. | - |
dc.contributor.author | VAN BAEL, Marlies | - |
dc.contributor.author | Van Elshocht, S. | - |
dc.date.accessioned | 2011-04-12T08:26:21Z | - |
dc.date.available | NO_RESTRICTION | - |
dc.date.available | 2011-04-12T08:26:21Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, 98(10) | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/1942/11862 | - |
dc.description.abstract | We have studied the effect of air exposure on lanthanum aluminates (LaAlOx) deposited by atomic layer deposition. Fourier transform infrared spectroscopy and thermal desorption spectroscopy of as-deposited LaAlOx showed that H2O is absorbed during air exposure and that the amount of absorbed H2O increases with increasing La atomic percent. C was found to be incorporated already during deposition in the form of carbonates. H2O and CO2 are outgassed during postdeposition annealing in an inert atmosphere. After a 700 degrees C postdeposition anneal, the LaAlOx becomes resistant against H2O absorption due to film densification. Alternatively, in situ capping of the LaAlOx with a similar to 2 nm thin Al2O3 film protects the LaAlOx against H2O absorption, but it also hinders the outgassing of the C contaminants during a postdeposition anneal. (C) 2011 American Institute of Physics. [doi:10.1063/1.3557501] | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping | - |
dc.type | Journal Contribution | - |
dc.identifier.issue | 10 | - |
dc.identifier.volume | 98 | - |
local.format.pages | 3 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Swerts, J.; Gielis, S.; Vereecke, G.; Adelmann, C.; Van Elshocht, S.] IMEC VZW, B-3001 Louvain, Belgium. [Gielis, S.] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium. [Hardy, A.; Dewulf, D.; Van Bael, M. K.] Hasselt Univ, IMO, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Hardy, A.; Dewulf, D.; Van Bael, M. K.] Hasselt Univ, IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1063/1.3557501 | - |
dc.identifier.isi | 000288277200058 | - |
item.fulltext | No Fulltext | - |
item.fullcitation | Swerts, J.; GIELIS, Sven; Vereecke, G.; HARDY, An; DEWULF, Daan; Adelmann, C.; VAN BAEL, Marlies & Van Elshocht, S. (2011) Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping. In: APPLIED PHYSICS LETTERS, 98(10). | - |
item.contributor | Swerts, J. | - |
item.contributor | GIELIS, Sven | - |
item.contributor | Vereecke, G. | - |
item.contributor | HARDY, An | - |
item.contributor | DEWULF, Daan | - |
item.contributor | Adelmann, C. | - |
item.contributor | VAN BAEL, Marlies | - |
item.contributor | Van Elshocht, S. | - |
item.validation | ecoom 2012 | - |
item.accessRights | Closed Access | - |
crisitem.journal.issn | 0003-6951 | - |
crisitem.journal.eissn | 1077-3118 | - |
Appears in Collections: | Research publications |
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