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http://hdl.handle.net/1942/12004
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Devloo-Casier, Kilian | - |
dc.contributor.author | Dendooven, Jolien | - |
dc.contributor.author | Ludwig, K.F. | - |
dc.contributor.author | LEKENS, Geert | - |
dc.contributor.author | D'HAEN, Jan | - |
dc.contributor.author | Detavernier, Christophe | - |
dc.date.accessioned | 2011-06-10T07:59:55Z | - |
dc.date.available | NO_RESTRICTION | - |
dc.date.available | 2011-06-10T07:59:55Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, 98(231905). p. 1-3 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/1942/12004 | - |
dc.description.abstract | The initial growth of HfO2 was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO2 was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H2O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness. | - |
dc.language.iso | en | - |
dc.title | In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 3 | - |
dc.identifier.issue | 231905 | - |
dc.identifier.spage | 1 | - |
dc.identifier.volume | 98 | - |
local.bibliographicCitation.jcat | A1 | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1063/1.3598433 | - |
dc.identifier.isi | 000291658900019 | - |
item.fullcitation | Devloo-Casier, Kilian; Dendooven, Jolien; Ludwig, K.F.; LEKENS, Geert; D'HAEN, Jan & Detavernier, Christophe (2011) In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates. In: APPLIED PHYSICS LETTERS, 98(231905). p. 1-3. | - |
item.fulltext | With Fulltext | - |
item.validation | ecoom 2013 | - |
item.contributor | Devloo-Casier, Kilian | - |
item.contributor | Dendooven, Jolien | - |
item.contributor | Ludwig, K.F. | - |
item.contributor | LEKENS, Geert | - |
item.contributor | D'HAEN, Jan | - |
item.contributor | Detavernier, Christophe | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 0003-6951 | - |
crisitem.journal.eissn | 1077-3118 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Kilian Devloo-Casier APPLAB9823231905_1.pdf | Published version | 492.28 kB | Adobe PDF | View/Open |
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