Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/12207
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Frigeri, C. | - |
dc.contributor.author | Serenyi, M. | - |
dc.contributor.author | Khanh, N. Q. | - |
dc.contributor.author | Csik, A. | - |
dc.contributor.author | Erdelyi, Z. | - |
dc.contributor.author | Nasi, L. | - |
dc.contributor.author | Beke, D. L. | - |
dc.contributor.author | BOYEN, Hans-Gerd | - |
dc.date.accessioned | 2011-10-11T07:31:40Z | - |
dc.date.available | NO_RESTRICTION | - |
dc.date.available | 2011-10-11T07:31:40Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | CRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880 | - |
dc.identifier.issn | 0232-1300 | - |
dc.identifier.uri | http://hdl.handle.net/1942/12207 | - |
dc.description.abstract | A combined study of hydrogenated sputtered single a-Si and a-Ge layers and a-Si/a-Ge multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single layers of a-Si and a-Ge shows that H escapes from the layer much more efficiently in a-Ge than in a-Si. This agrees with IR absorbance measurements on the MLs showing that the Ge-H signal disappears at a lower annealing time (for a given annealing temperature) than Si-H and Si-H(2) do. The conclusion is drawn that the structural degradation of a-Si/a-Ge MLs primary starts with release of H in the Ge layers most probably because of the smaller binding energy of the H-Ge bond and the greater weakness of the Ge lattice. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.description.sponsorship | Work supported by the Scientific Cooperation Agreement between MTA (Hungary) and CNR (Italy) under the contract MTA 1102, as well as by OTKA grant Nos. K-67969, CK-80126 and TAMOP 4.2.1-08/1- 2008-003 project.. Z. Erdelyi is a grantee of the 'Bolyai Janos' scholarship. | - |
dc.language.iso | en | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.subject.other | hydrogenated a-Si/a-Ge; annealing; structure | - |
dc.subject.other | hydrogenated a-Si/a-Ge; annealing; structure | - |
dc.title | Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 880 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 877 | - |
dc.identifier.volume | 46 | - |
local.format.pages | 4 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Frigeri, C; Nasi, L] CNR IMEM Inst, I-43010 Parma, Italy [Serenyi, M; Khanh, NQ] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary [Csik, A] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary [Erdelyi, Z; Beke, DL] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary [Boyen, HG] Hasselt Univ, Inst Mat Res IMO, Hasselt, Belgium frigeri@imem.cnr.it | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1002/crat.201000632 | - |
dc.identifier.isi | 000293949700027 | - |
item.accessRights | Closed Access | - |
item.validation | ecoom 2012 | - |
item.fulltext | No Fulltext | - |
item.fullcitation | Frigeri, C.; Serenyi, M.; Khanh, N. Q.; Csik, A.; Erdelyi, Z.; Nasi, L.; Beke, D. L. & BOYEN, Hans-Gerd (2011) Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers. In: CRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880. | - |
item.contributor | Frigeri, C. | - |
item.contributor | Serenyi, M. | - |
item.contributor | Khanh, N. Q. | - |
item.contributor | Csik, A. | - |
item.contributor | Erdelyi, Z. | - |
item.contributor | Nasi, L. | - |
item.contributor | Beke, D. L. | - |
item.contributor | BOYEN, Hans-Gerd | - |
crisitem.journal.issn | 0232-1300 | - |
crisitem.journal.eissn | 1521-4079 | - |
Appears in Collections: | Research publications |
SCOPUSTM
Citations
1
checked on Sep 3, 2020
WEB OF SCIENCETM
Citations
2
checked on Apr 22, 2024
Page view(s)
72
checked on May 30, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.