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http://hdl.handle.net/1942/12207
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DC Field | Value | Language |
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dc.contributor.author | Frigeri, C. | - |
dc.contributor.author | Serenyi, M. | - |
dc.contributor.author | Khanh, N. Q. | - |
dc.contributor.author | Csik, A. | - |
dc.contributor.author | Erdelyi, Z. | - |
dc.contributor.author | Nasi, L. | - |
dc.contributor.author | Beke, D. L. | - |
dc.contributor.author | BOYEN, Hans-Gerd | - |
dc.date.accessioned | 2011-10-11T07:31:40Z | - |
dc.date.available | NO_RESTRICTION | - |
dc.date.available | 2011-10-11T07:31:40Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | CRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880 | - |
dc.identifier.issn | 0232-1300 | - |
dc.identifier.uri | http://hdl.handle.net/1942/12207 | - |
dc.description.abstract | A combined study of hydrogenated sputtered single a-Si and a-Ge layers and a-Si/a-Ge multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single layers of a-Si and a-Ge shows that H escapes from the layer much more efficiently in a-Ge than in a-Si. This agrees with IR absorbance measurements on the MLs showing that the Ge-H signal disappears at a lower annealing time (for a given annealing temperature) than Si-H and Si-H(2) do. The conclusion is drawn that the structural degradation of a-Si/a-Ge MLs primary starts with release of H in the Ge layers most probably because of the smaller binding energy of the H-Ge bond and the greater weakness of the Ge lattice. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.description.sponsorship | Work supported by the Scientific Cooperation Agreement between MTA (Hungary) and CNR (Italy) under the contract MTA 1102, as well as by OTKA grant Nos. K-67969, CK-80126 and TAMOP 4.2.1-08/1- 2008-003 project.. Z. Erdelyi is a grantee of the 'Bolyai Janos' scholarship. | - |
dc.language.iso | en | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.subject.other | hydrogenated a-Si/a-Ge; annealing; structure | - |
dc.subject.other | hydrogenated a-Si/a-Ge; annealing; structure | - |
dc.title | Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 880 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 877 | - |
dc.identifier.volume | 46 | - |
local.format.pages | 4 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Frigeri, C; Nasi, L] CNR IMEM Inst, I-43010 Parma, Italy [Serenyi, M; Khanh, NQ] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary [Csik, A] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary [Erdelyi, Z; Beke, DL] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary [Boyen, HG] Hasselt Univ, Inst Mat Res IMO, Hasselt, Belgium frigeri@imem.cnr.it | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1002/crat.201000632 | - |
dc.identifier.isi | 000293949700027 | - |
item.contributor | Frigeri, C. | - |
item.contributor | Serenyi, M. | - |
item.contributor | Khanh, N. Q. | - |
item.contributor | Csik, A. | - |
item.contributor | Erdelyi, Z. | - |
item.contributor | Nasi, L. | - |
item.contributor | Beke, D. L. | - |
item.contributor | BOYEN, Hans-Gerd | - |
item.fullcitation | Frigeri, C.; Serenyi, M.; Khanh, N. Q.; Csik, A.; Erdelyi, Z.; Nasi, L.; Beke, D. L. & BOYEN, Hans-Gerd (2011) Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers. In: CRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880. | - |
item.fulltext | No Fulltext | - |
item.accessRights | Closed Access | - |
item.validation | ecoom 2012 | - |
crisitem.journal.issn | 0232-1300 | - |
crisitem.journal.eissn | 1521-4079 | - |
Appears in Collections: | Research publications |
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