Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12207
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dc.contributor.authorFrigeri, C.-
dc.contributor.authorSerenyi, M.-
dc.contributor.authorKhanh, N. Q.-
dc.contributor.authorCsik, A.-
dc.contributor.authorErdelyi, Z.-
dc.contributor.authorNasi, L.-
dc.contributor.authorBeke, D. L.-
dc.contributor.authorBOYEN, Hans-Gerd-
dc.date.accessioned2011-10-11T07:31:40Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2011-10-11T07:31:40Z-
dc.date.issued2011-
dc.identifier.citationCRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880-
dc.identifier.issn0232-1300-
dc.identifier.urihttp://hdl.handle.net/1942/12207-
dc.description.abstractA combined study of hydrogenated sputtered single a-Si and a-Ge layers and a-Si/a-Ge multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single layers of a-Si and a-Ge shows that H escapes from the layer much more efficiently in a-Ge than in a-Si. This agrees with IR absorbance measurements on the MLs showing that the Ge-H signal disappears at a lower annealing time (for a given annealing temperature) than Si-H and Si-H(2) do. The conclusion is drawn that the structural degradation of a-Si/a-Ge MLs primary starts with release of H in the Ge layers most probably because of the smaller binding energy of the H-Ge bond and the greater weakness of the Ge lattice. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.description.sponsorshipWork supported by the Scientific Cooperation Agreement between MTA (Hungary) and CNR (Italy) under the contract MTA 1102, as well as by OTKA grant Nos. K-67969, CK-80126 and TAMOP 4.2.1-08/1- 2008-003 project.. Z. Erdelyi is a grantee of the 'Bolyai Janos' scholarship.-
dc.language.isoen-
dc.publisherWILEY-BLACKWELL-
dc.subject.otherhydrogenated a-Si/a-Ge; annealing; structure-
dc.subject.otherhydrogenated a-Si/a-Ge; annealing; structure-
dc.titleHydrogen release in annealed hydrogenated a-Si/a-Ge multilayers-
dc.typeJournal Contribution-
dc.identifier.epage880-
dc.identifier.issue8-
dc.identifier.spage877-
dc.identifier.volume46-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notes[Frigeri, C; Nasi, L] CNR IMEM Inst, I-43010 Parma, Italy [Serenyi, M; Khanh, NQ] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary [Csik, A] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary [Erdelyi, Z; Beke, DL] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary [Boyen, HG] Hasselt Univ, Inst Mat Res IMO, Hasselt, Belgium frigeri@imem.cnr.it-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1002/crat.201000632-
dc.identifier.isi000293949700027-
item.fulltextNo Fulltext-
item.validationecoom 2012-
item.contributorKhanh, N. Q.-
item.contributorErdelyi, Z.-
item.contributorBeke, D. L.-
item.contributorBOYEN, Hans-Gerd-
item.contributorSerenyi, M.-
item.contributorNasi, L.-
item.contributorFrigeri, C.-
item.contributorCsik, A.-
item.fullcitationFrigeri, C.; Serenyi, M.; Khanh, N. Q.; Csik, A.; Erdelyi, Z.; Nasi, L.; Beke, D. L. & BOYEN, Hans-Gerd (2011) Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers. In: CRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880.-
item.accessRightsClosed Access-
crisitem.journal.issn0232-1300-
crisitem.journal.eissn1521-4079-
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