Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12211
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dc.contributor.authorDE DOBBELAERE, Christopher-
dc.contributor.authorLourdes Calzada, Maria-
dc.contributor.authorJimenez, Ricardo-
dc.contributor.authorRicote, Jesus-
dc.contributor.authorBretos, Inigo-
dc.contributor.authorMULLENS, Jules-
dc.contributor.authorHARDY, An-
dc.contributor.authorVAN BAEL, Marlies-
dc.date.accessioned2011-10-11T07:44:21Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2011-10-11T07:44:21Z-
dc.date.issued2011-
dc.identifier.citationJOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 133(33). p. 12922-12925-
dc.identifier.issn0002-7863-
dc.identifier.urihttp://hdl.handle.net/1942/12211-
dc.description.abstractFunctional oxide films were obtained at low temperature by combination of aqueous precursors and a UV-assisted annealing process (aqueous photochemical solution deposition). For a PbTiO(3) model system, functional ferroelectric perovskite films were prepared at only 400 degrees C, a temperature compatible with the current Si-technology demands. Intrinsically photosensitive and environmentally friendly aqueous precursors can be prepared for most of the functional multimetal oxides, as additionally demonstrated here for multiferroic BiFeO(3), yielding virtually unlimited possibilities for this low-temperature fabrication technology.-
dc.description.sponsorshipA.H. is a postdoctoral research fellow of the Research Foundation-Flanders (FWO Vlaanderen). I.B. is a postdoctoral research fellow financed by the JAE-Doc CSIC Spanish Program. The Spanish authors are grateful for the partial financial support from the Spanish Projects MAT2010-15365.-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.titleAqueous Solutions for Low-Temperature Photoannealing of Functional Oxide Films: Reaching the 400 degrees C Si-Technology Integration Barrier-
dc.typeJournal Contribution-
dc.identifier.epage12925-
dc.identifier.issue33-
dc.identifier.spage12922-
dc.identifier.volume133-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notes[De Dobbelaere, C; Mullens, J; Hardy, A; Van Bael, MK] Univ Hasselt, IMEC VZW, Div IMOMEC, Inorgan & Phys Chem Grp,Inst Mat Res, B-3590 Diepenbeek, Belgium [Calzada, ML; Jimenez, R; Ricote, J; Bretos, I] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1021/ja203553n-
dc.identifier.isi000294591300008-
item.accessRightsClosed Access-
item.contributorDE DOBBELAERE, Christopher-
item.contributorLourdes Calzada, Maria-
item.contributorJimenez, Ricardo-
item.contributorRicote, Jesus-
item.contributorBretos, Inigo-
item.contributorMULLENS, Jules-
item.contributorHARDY, An-
item.contributorVAN BAEL, Marlies-
item.fulltextNo Fulltext-
item.fullcitationDE DOBBELAERE, Christopher; Lourdes Calzada, Maria; Jimenez, Ricardo; Ricote, Jesus; Bretos, Inigo; MULLENS, Jules; HARDY, An & VAN BAEL, Marlies (2011) Aqueous Solutions for Low-Temperature Photoannealing of Functional Oxide Films: Reaching the 400 degrees C Si-Technology Integration Barrier. In: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 133(33). p. 12922-12925.-
item.validationecoom 2012-
crisitem.journal.issn0002-7863-
crisitem.journal.eissn1520-5126-
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