Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12252
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dc.contributor.authorWANG, Qiushi-
dc.contributor.authorGao, Wei-
dc.contributor.authorSHAN, Lianchen-
dc.contributor.authorZhang, Jian-
dc.contributor.authorJin, Yunxia-
dc.contributor.authorCong, Ridong-
dc.contributor.authorCui, Qiliang-
dc.date.accessioned2011-10-24T15:11:51Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2011-10-24T15:11:51Z-
dc.date.issued2011-
dc.identifier.citationJOURNAL OF SOLID STATE CHEMISTRY, 184 (9). p. 2553-2558-
dc.identifier.issn0022-4596-
dc.identifier.urihttp://hdl.handle.net/1942/12252-
dc.description.abstractWe report here one-step synthesis of Si(3)N(4) nanodendrites by selectively applying a vapor-solid (VS) and vapor-liquid-solid (VLS) strategy via direct current arc discharge method. The resultant nanodendrites were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy and X-ray powder diffraction. The spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode. The uniform secondary nanowire branches were epitaxial grown from two side surfaces of the nanowire stems. The pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process. These branch nanowires were unsystematically grown from the nanocone-like stems. The photoluminescence spectra of the nanodendrites show a strong white light emission around 400-750 nm, suggesting their potential applications in light and electron emission devices. (C) 2011 Elsevier inc. All rights reserved.-
dc.description.sponsorshipThis work is supported by the Research Startup Fund of Jilin University (no. 419080103460), the Natural Science Foundation of China (nos. 50772043 and 11074089) and the National Basic Research Program of China (no. 2011CB808200).-
dc.language.isoen-
dc.publisherACADEMIC PRESS INC ELSEVIER SCIENCE-
dc.subject.otherSilicon nitride; Nanostructure; Arc discharge; Photoluminescence-
dc.titleOne-step growth of Si(3)N(4) stem-branch featured nanostructures: Morphology control by VS and VLS mode-
dc.typeJournal Contribution-
dc.identifier.epage2558-
dc.identifier.issue9-
dc.identifier.spage2553-
dc.identifier.volume184-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notesCui, QL (reprint author),[Wang, QS; Gao, W; Zhang, J; Jin, YX; Cong, RD; Cui, QL] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China [Shan, LC] Hasselt Univ, Inst Mat Res IMO, BE-3590 Diepenbeek, Belgium cql@jlu.edu.cn-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.jssc.2011.06.041-
dc.identifier.isi000294835700036-
item.validationecoom 2012-
item.contributorWANG, Qiushi-
item.contributorGao, Wei-
item.contributorSHAN, Lianchen-
item.contributorZhang, Jian-
item.contributorJin, Yunxia-
item.contributorCong, Ridong-
item.contributorCui, Qiliang-
item.accessRightsRestricted Access-
item.fullcitationWANG, Qiushi; Gao, Wei; SHAN, Lianchen; Zhang, Jian; Jin, Yunxia; Cong, Ridong & Cui, Qiliang (2011) One-step growth of Si(3)N(4) stem-branch featured nanostructures: Morphology control by VS and VLS mode. In: JOURNAL OF SOLID STATE CHEMISTRY, 184 (9). p. 2553-2558.-
item.fulltextWith Fulltext-
crisitem.journal.issn0022-4596-
crisitem.journal.eissn1095-726X-
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