Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12839
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dc.contributor.authorLu, Mingtao-
dc.contributor.authorNicolai, Herman T.-
dc.contributor.authorKuik, Martijn-
dc.contributor.authorWetzelaer, Gert-Jan A. H.-
dc.contributor.authorWildeman, Jurjen-
dc.contributor.authorPALMAERTS, Arne-
dc.contributor.authorBlom, Paul W. M.-
dc.date.accessioned2011-12-19T10:23:51Z-
dc.date.available2011-12-19T10:23:51Z-
dc.date.issued2011-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(10), p. 2482-2487-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/1942/12839-
dc.description.abstractWe demonstrate a solution processed bi-layer PLED based on poly(p-phenylene vinylene) derivatives using orthogonal solvents. To lower the voltage drop the hole transport layer (HTL) based on poly[2,5-bis(2'-ethylhexyloxy)-co-2,5-bis(butoxy)-1,4-phenylenevinylene] (BEH/BB-PPV (1: 3)) is doped with tetracyano-tetrafluoro-quinodimethane (F4TCNQ). The conductivity of BEH/BB-PPV (1: 3) was observed to increase by two orders of magnitude upon doping with F4TCNQ. The doped HTL was observed to lower the operating voltage of a double layer PLED, but suffers from additional quenching by the dopant at higher voltages due to the lack of an electron blocking functionality. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.language.isoen-
dc.publisherWILEY-BLACKWELL-
dc.subject.otherhole-transport layer; light-emitting diodes; polymers; poly(phenylenevinylenes)-
dc.titlePolymer light-emitting diodes with doped hole-transport layers-
dc.typeJournal Contribution-
dc.identifier.epage2487-
dc.identifier.issue10-
dc.identifier.spage2482-
dc.identifier.volume208-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notes[Lu, MT; Nicolai, HT; Kuik, M; Wetzelaer, GJAH; Wildeman, J; Blom, PWM] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands. [Lu, MT; Wetzelaer, GJAH] Dutch Polymer Inst, NL-5600 AX Eindhoven, Netherlands. [Palmaerts, A] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Blom, PWM] TNO Holst Ctr, NL-5605 KN Eindhoven, Netherlands.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1002/pssa.201127319-
dc.identifier.isi000296618600049-
item.accessRightsRestricted Access-
item.validationecoom 2012-
item.fulltextWith Fulltext-
item.contributorLu, Mingtao-
item.contributorNicolai, Herman T.-
item.contributorKuik, Martijn-
item.contributorWetzelaer, Gert-Jan A. H.-
item.contributorWildeman, Jurjen-
item.contributorPALMAERTS, Arne-
item.contributorBlom, Paul W. M.-
item.fullcitationLu, Mingtao; Nicolai, Herman T.; Kuik, Martijn; Wetzelaer, Gert-Jan A. H.; Wildeman, Jurjen; PALMAERTS, Arne & Blom, Paul W. M. (2011) Polymer light-emitting diodes with doped hole-transport layers. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(10), p. 2482-2487.-
crisitem.journal.issn1862-6300-
crisitem.journal.eissn1862-6319-
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