Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13614
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dc.contributor.authorHARDY, An-
dc.contributor.authorVan Elshocht, S.-
dc.contributor.authorDE DOBBELAERE, Christopher-
dc.contributor.authorHadermann, J.-
dc.contributor.authorPourtois, G.-
dc.contributor.authorDe Gendt, S.-
dc.contributor.authorAfanas'ev, V. V.-
dc.contributor.authorVAN BAEL, Marlies-
dc.date.accessioned2012-04-27T14:32:54Z-
dc.date.available2012-04-27T14:32:54Z-
dc.date.issued2012-
dc.identifier.citationMATERIALS RESEARCH BULLETIN, 47 (3), p. 511-517-
dc.identifier.issn0025-5408-
dc.identifier.urihttp://hdl.handle.net/1942/13614-
dc.description.abstractUltrathin bismuth titanate films (Bi2Ti2O7, 5-25 nm) are deposited onto SiO2/Si substrates by aqueous chemical solution deposition and their evolution during annealing is studied. The films crystallize into a preferentially oriented, pure pyrochlore phase between 500 and 700 degrees C, depending on the film thickness and the total thermal budget. Crystallization causes a strong increase of surface roughness compared to amorphous films. An increase of the interfacial layer thickness is observed after anneal at 600 degrees C, together with intermixing of bismuth with the substrate as shown by TEM-EDX. The band gap was determined to be similar to 3 eV from photoconductivity measurements and high dielectric constants between 30 and 130 were determined from capacitance voltage measurements, depending on the processing conditions. (C) 2012 Elsevier Ltd. All rights reserved.-
dc.description.sponsorshipA. Hardy is a postdoctoral research fellow and C. De Dobbelaere a research assistant of the Research foundation-Flanders (FWO-Vlaanderen). This work is supported by the Long Term Structural Methusalem Funding by the Flemish Government and FWO research project G.0184.09. The authors thank Olivier Richard (imec) for TEM sample preparation.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subject.otherOxides; Thin films; Sol-gel chemistry; Dielectric properties-
dc.subject.otherMultidisciplinary Materials Science; Oxides; Thin films; Sol-gel chemistry; Dielectric properties-
dc.titleProperties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films-
dc.typeJournal Contribution-
dc.identifier.epage517-
dc.identifier.issue3-
dc.identifier.spage511-
dc.identifier.volume47-
local.format.pages7-
local.bibliographicCitation.jcatA1-
dc.description.notes[Hardy, A.; De Dobbelaere, C.; Van Bael, M. K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Hardy, A.; Van Bael, M. K.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. [Van Elshocht, S.; Pourtois, G.; De Gendt, S.] IMEC VZW, Heverlee, Belgium. [Hadermann, J.] Univ Antwerp, EMAT, Antwerp, Belgium. [De Gendt, S.] KULeuven, Dept Chem, Heverlee, Belgium. [Afanas'ev, V. V.] KULeuven, Dept Phys, Heverlee, Belgium. an.hardy@uhasselt.be-
local.publisher.placeOXFORD-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.materresbull.2012.01.001-
dc.identifier.isi000301994100001-
item.fulltextWith Fulltext-
item.contributorHARDY, An-
item.contributorVan Elshocht, S.-
item.contributorDE DOBBELAERE, Christopher-
item.contributorHadermann, J.-
item.contributorPourtois, G.-
item.contributorDe Gendt, S.-
item.contributorAfanas'ev, V. V.-
item.contributorVAN BAEL, Marlies-
item.fullcitationHARDY, An; Van Elshocht, S.; DE DOBBELAERE, Christopher; Hadermann, J.; Pourtois, G.; De Gendt, S.; Afanas'ev, V. V. & VAN BAEL, Marlies (2012) Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films. In: MATERIALS RESEARCH BULLETIN, 47 (3), p. 511-517.-
item.accessRightsRestricted Access-
item.validationecoom 2013-
crisitem.journal.issn0025-5408-
crisitem.journal.eissn1873-4227-
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