Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13990
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dc.contributor.authorLu, Ying-Gang-
dc.contributor.authorTURNER, Stuart-
dc.contributor.authorVerbeeck, Johan-
dc.contributor.authorJANSSENS, Stoffel-
dc.contributor.authorWAGNER, Patrick-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorVan Tendeloo, Gustaaf-
dc.date.accessioned2012-09-27T09:30:20Z-
dc.date.available2012-09-27T09:30:20Z-
dc.date.issued2012-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 101 (4), p. (Article 041907)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/13990-
dc.description.abstractThe boron dopant distribution in individual heavily boron-doped nanocrystalline diamond film grains, with sizes ranging from 100 to 350nm in diameter, has been studied using a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy. Using these tools, the boron distribution and local boron coordination have been determined. Quantification results reveal embedding of B dopants in the diamond lattice, and a preferential enrichment of boron at defective areas and twin boundaries. Coordination mapping reveals a distinct difference in coordination of the B dopants in "pristine" diamond areas and in defective regions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738885]-
dc.description.sponsorshipThis work was performed within the framework of an IAP P6/42 project of the Belgian government. The authors acknowledge financial support from the Fund for Scientific Research Flanders (FWO) under Contract No. G.0568.10N. The authors acknowledge support from the European Union under a Contract from an Integrated Infrastructure Initiative (Reference 262348 ESMI), the Marie Curie ITN "MATCON" (PITN-GA-2009-238201), and the Collaborative Project "DINAMO" (No. 245122). G.V.T. and J.V. acknowledge the ERC Grant N246791-COUNTATOMS and ERC Starting Grant 278510 VORTEX. S.T. gratefully acknowledges financial support from the FWO. The microscope used in this study was partially financed by the Hercules Foundation of the Flemish Government.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subject.otherPhysics, Applied-
dc.titleDirect visualization of boron dopant distribution and coordination in individual chemical vapor deposition nanocrystalline B-doped diamond grains-
dc.typeJournal Contribution-
dc.identifier.issue4-
dc.identifier.spage(Article 041907)-
dc.identifier.volume101-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notesTurner, S (reprint author), [Lu, Ying-Gang; Turner, Stuart; Verbeeck, Johan; Van Tendeloo, Gustaaf] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium. [Janssens, Stoffel D.; Wagner, Patrick; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, B-3950 Diepenbeek, Belgium. [Janssens, Stoffel D.; Wagner, Patrick; Haenen, Ken] IMEC vzw, IMOMEC, B-3590 Diepenbeek, Belgium. stuart.turner@ua.ac.be-
local.publisher.placeMELVILLE-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1063/1.4738885-
dc.identifier.isi000306944700030-
item.validationecoom 2013-
item.accessRightsClosed Access-
item.fullcitationLu, Ying-Gang; TURNER, Stuart; Verbeeck, Johan; JANSSENS, Stoffel; WAGNER, Patrick; HAENEN, Ken & Van Tendeloo, Gustaaf (2012) Direct visualization of boron dopant distribution and coordination in individual chemical vapor deposition nanocrystalline B-doped diamond grains. In: APPLIED PHYSICS LETTERS, 101 (4), p. (Article 041907).-
item.fulltextNo Fulltext-
item.contributorLu, Ying-Gang-
item.contributorTURNER, Stuart-
item.contributorVerbeeck, Johan-
item.contributorJANSSENS, Stoffel-
item.contributorWAGNER, Patrick-
item.contributorHAENEN, Ken-
item.contributorVan Tendeloo, Gustaaf-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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