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http://hdl.handle.net/1942/14364
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DC Field | Value | Language |
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dc.contributor.author | YIN, Hong | - |
dc.contributor.author | BOYEN, Hans-Gerd | - |
dc.contributor.author | Ziemann, P. | - |
dc.contributor.author | Dohuard, B. | - |
dc.contributor.author | Houssiau, L. | - |
dc.contributor.author | Renaux, F. | - |
dc.contributor.author | Hecq, M. | - |
dc.contributor.author | Bittencourt, C. | - |
dc.date.accessioned | 2012-11-16T10:55:25Z | - |
dc.date.available | 2012-11-16T10:55:25Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | DIAMOND AND RELATED MATERIALS, 17 (3), p. 276-282 | - |
dc.identifier.issn | 0925-9635 | - |
dc.identifier.uri | http://hdl.handle.net/1942/14364 | - |
dc.description.abstract | Phase pure cubic BoronNitride (c-BN) films were epitaxially grown on (001) Diamond substrates at 900 degrees C and analyzed for purity by taking X-ray Photoelectron Spectroscopy (XPS) as well as Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles. No metallic impurities could be detected within the resolution limit of ToF-SIMS corresponding to some ppm. The films, however, still contain typically 0.5 at. % carbon and 1 at.% oxygen, which both can be traced back to the boron sputter target. All as-prepared c-BN films, with and without additional sputter cleaning of their surface, exhibit a p-type conductivity, which can be attributed most probably to carbon on nitrogen vacancy sites. Doping c-BN with Si during film growth turned out to be impeded at high temperatures with a strong tendency of Si to segregate towards the sample surface. While such high c-BN deposition temperatures could be demonstrated as helpful to decrease the amount of carbon and oxygen contaminants, in case of Si dopants this effect restricted the level of doping to approximately 200 ppm. (C) 2008 Elsevier B.V. All rights reserved. | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject.other | c-BN; Si doping; ToF-SIMS depth profiles | - |
dc.subject.other | Materials Science, Multidisciplinary; c-BN; Si doping; ToF SIMS depth profiles | - |
dc.title | Purity of epitaxial cubic BoronNitride films on (001) Diamond - A prerequisite for their doping | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 282 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 276 | - |
dc.identifier.volume | 17 | - |
local.format.pages | 7 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Yin, H.; Boyen, H. -G.; Ziemann, P.] Univ Ulm, Inst Solid State Phys, D-89069 Ulm, Germany. [Dohuard, B.; Houssiau, L.] Univ Namur, LISE, B-5000 Namur, Belgium. [Renaux, F.; Hecq, M.; Bittencourt, C.] Mat Nova, B-7000 Mons, Belgium. paul.ziemann@uni-ulm.de | - |
local.publisher.place | LAUSANNE | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1016/j.diamond.2007.12.062 | - |
dc.identifier.isi | 000255475300011 | - |
item.contributor | YIN, Hong | - |
item.contributor | BOYEN, Hans-Gerd | - |
item.contributor | Ziemann, P. | - |
item.contributor | Dohuard, B. | - |
item.contributor | Houssiau, L. | - |
item.contributor | Renaux, F. | - |
item.contributor | Hecq, M. | - |
item.contributor | Bittencourt, C. | - |
item.fullcitation | YIN, Hong; BOYEN, Hans-Gerd; Ziemann, P.; Dohuard, B.; Houssiau, L.; Renaux, F.; Hecq, M. & Bittencourt, C. (2008) Purity of epitaxial cubic BoronNitride films on (001) Diamond - A prerequisite for their doping. In: DIAMOND AND RELATED MATERIALS, 17 (3), p. 276-282. | - |
item.fulltext | With Fulltext | - |
item.accessRights | Restricted Access | - |
item.validation | ecoom 2010 | - |
crisitem.journal.issn | 0925-9635 | - |
crisitem.journal.eissn | 1879-0062 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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boyen 1.pdf Restricted Access | Published version | 861.52 kB | Adobe PDF | View/Open Request a copy |
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