Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/14376
Full metadata record
DC FieldValueLanguage
dc.contributor.authorVereecke, G.-
dc.contributor.authorCLAES, Monica-
dc.contributor.authorLe, Q. T.-
dc.contributor.authorKESTERS, Els-
dc.contributor.authorStruyf, H.-
dc.contributor.authorCARLEER, Robert-
dc.contributor.authorADRIAENSENS, Peter-
dc.date.accessioned2012-11-16T11:25:50Z-
dc.date.available2012-11-16T11:25:50Z-
dc.date.issued2011-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, 14 (10), p. H408-H410-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/1942/14376-
dc.description.abstractHBr plasma treatments are used to decrease surface line edge roughness (LER) of patterned photoresist (PR). In this work the modification of two 193-nm photoresists by an HBr plasma treatment was characterized by Fourier Transform Infrared (FTIR) spectroscopy, H-1-NMR (Nuclear Magnetic Resonance) and gel permeation chromatography (GPC). PR modification was shown to follow similar schemes as the degradation of poly(methyl methacrylate) (PMMA) by UV light. Beside the cleavage of ester side-groups, this study showed extensive scission of PR chains, which will contribute to LER reduction by increasing PR chains mobility. However chain scission was accompanied by cross-linking, which may put a limit to the surface-smoothening potential of this technique. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609838] All rights reserved.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subject.otherElectrochemistry; Materials Science, Multidisciplinary-
dc.titleCharacterization of Modification of 193-nm Photoresist by HBr Plasma-
dc.typeJournal Contribution-
dc.identifier.epageH410-
dc.identifier.issue10-
dc.identifier.spageH408-
dc.identifier.volume14-
local.format.pages3-
local.bibliographicCitation.jcatA1-
dc.description.notes[Vereecke, G.; Claes, M.; Le, Q. T.; Kesters, E.; Struyf, H.] IMEC, B-3001 Heverlee, Belgium. [Carleer, R.; Adriaensens, P.] Univ Hasselt, IMO Div Chem, B-3590 Diepenbeek, Belgium. guy.vereecke@imec.be-
local.publisher.placePENNINGTON-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1149/1.3609838-
dc.identifier.isi000295211600024-
item.fullcitationVereecke, G.; CLAES, Monica; Le, Q. T.; KESTERS, Els; Struyf, H.; CARLEER, Robert & ADRIAENSENS, Peter (2011) Characterization of Modification of 193-nm Photoresist by HBr Plasma. In: ELECTROCHEMICAL AND SOLID STATE LETTERS, 14 (10), p. H408-H410.-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
item.validationecoom 2012-
item.contributorCLAES, Monica-
item.contributorKESTERS, Els-
item.contributorCARLEER, Robert-
item.contributorLe, Q. T.-
item.contributorVereecke, G.-
item.contributorADRIAENSENS, Peter-
item.contributorStruyf, H.-
crisitem.journal.issn1099-0062-
Appears in Collections:Research publications
Show simple item record

SCOPUSTM   
Citations

6
checked on Sep 2, 2020

WEB OF SCIENCETM
Citations

5
checked on Jul 7, 2022

Page view(s)

64
checked on Jul 6, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.