Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/14505
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dc.contributor.authorSeshan, V.-
dc.contributor.authorArroyo, C.R.-
dc.contributor.authorCastellanos-Gomez, A.-
dc.contributor.authorPrins, F.-
dc.contributor.authorPerrin, M. L.-
dc.contributor.authorJANSSENS, Stoffel-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorNESLADEK, Milos-
dc.contributor.authorSudhoelter, E. J. R.-
dc.contributor.authorde Smet, L. C. P. M.-
dc.contributor.authorvan der Zant, H. S. J.-
dc.contributor.authorDULIC, Diana-
dc.date.accessioned2013-01-04T10:20:46Z-
dc.date.available2013-01-04T10:20:46Z-
dc.date.issued2012-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 101 (19)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/14505-
dc.description.abstractA high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to similar to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766346]-
dc.description.sponsorshipWe thank B. Schneider for SEM imaging. This work was supported by the Delft University of Technology, Hasselt University, the Dutch organization for Fundamental Research on Matter (FOM), the Research Programs G.0555.10N of the Research Foundation-Flanders (FWO), the European Union (FP7) through the programs RODIN, MOLESOL, DIAMANT (Co. N 270197), and the Marie Curie ITN "MATCON" (PITN-GA-2009-238201).-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subject.otherannealing; boron; diamond; elemental semiconductors; energy gap; graphite; graphitisation; nanofabrication; nanostructured materials; Raman spectra; scanning electron microscopy-
dc.subject.otherPhysics, Applied; annealing; boron; diamond; elemental semiconductors; energy gap; graphite; graphitisation; nanofabrication; nanostructured materials; Raman spectra; scanning electron microscopy-
dc.titleCurrent-induced nanogap formation and graphitization in boron-doped diamond films-
dc.typeJournal Contribution-
dc.identifier.issue19-
dc.identifier.volume101-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notesArroyo, CR (reprint author),[Seshan, V.; Arroyo, C. R.; Castellanos-Gomez, A.; Prins, F.; Perrin, M. L.; Janssens, S. D.; van der Zant, H. S. J.; Dulic, D.] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands. [Seshan, V.; Janssens, S. D.; Sudhoelter, E. J. R.; de Smet, L. C. P. M.] Delft Univ Technol, Dept Chem Engn, NL-2628 BL Delft, Netherlands. [Haenen, K.; Nesladek, M.] Hasselt Univ, Inst Mat Res, BE-3590 Diepenbeek, Belgium. [Haenen, K.; Nesladek, M.] IMEC VZW, IMOMEC, BE-3590 Diepenbeek, Belgium. c.arroyorodriguez@tudelft.nl; a.castellanosgomez@tudelft.nl-
local.publisher.placeMELVILLE-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1063/1.4766346-
dc.identifier.isi000311320100054-
item.validationecoom 2013-
item.fullcitationSeshan, V.; Arroyo, C.R.; Castellanos-Gomez, A.; Prins, F.; Perrin, M. L.; JANSSENS, Stoffel; HAENEN, Ken; NESLADEK, Milos; Sudhoelter, E. J. R.; de Smet, L. C. P. M.; van der Zant, H. S. J. & DULIC, Diana (2012) Current-induced nanogap formation and graphitization in boron-doped diamond films. In: APPLIED PHYSICS LETTERS, 101 (19).-
item.contributorSeshan, V.-
item.contributorArroyo, C.R.-
item.contributorCastellanos-Gomez, A.-
item.contributorPrins, F.-
item.contributorPerrin, M. L.-
item.contributorJANSSENS, Stoffel-
item.contributorHAENEN, Ken-
item.contributorNESLADEK, Milos-
item.contributorSudhoelter, E. J. R.-
item.contributorde Smet, L. C. P. M.-
item.contributorvan der Zant, H. S. J.-
item.contributorDULIC, Diana-
item.accessRightsClosed Access-
item.fulltextNo Fulltext-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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