Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/14778
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dc.contributor.authorFrigeri, C.-
dc.contributor.authorSerenyi, M.-
dc.contributor.authorKhanh, N. Q.-
dc.contributor.authorCsik, A.-
dc.contributor.authorNasi, L.-
dc.contributor.authorErdelyi, Z.-
dc.contributor.authorBeke, D. L.-
dc.contributor.authorBOYEN, Hans-Gerd-
dc.date.accessioned2013-03-22T10:04:32Z-
dc.date.available2013-03-22T10:04:32Z-
dc.date.issued2013-
dc.identifier.citationAPPLIED SURFACE SCIENCE, 267, p. 30-34-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/1942/14778-
dc.description.abstractThe relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing. (C) 2012 Elsevier B. V. All rights reserved.-
dc.description.sponsorshipWork supported by the Scientific Cooperation Agreement between CNR (Italy) and MTA (Hungary) under the contract MTA 1102, as well as by OTKA Grant Nos. K-67969, CK-80126, and TAMOP 4.2.1./B-09/1/KONV-2010-0007 project (implemented through the New Hungary Development Plan cofinanced by the European Social Fund, and the European Regional Development Fund). Z. Erdélyi is a grantee of the ‘Bolyai János’ scholarship. National Office for Research and Technology (Hungary, NKTH) is also acknowledged for the support via Grant No. TFSOLAR2.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2012 Elsevier B.V. All rights reserved.-
dc.subject.otherAmorphous Si/Ge superlattice-
dc.subject.otherHydrogen-
dc.subject.otherAnnealing-
dc.subject.otherNanostructure-
dc.subject.otherBlistering-
dc.titleHydrogen behaviour in amorphous Si/Ge nano-structures after annealing-
dc.typeJournal Contribution-
dc.identifier.epage34-
dc.identifier.spage30-
dc.identifier.volume267-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Frigeri, C.; Nasi, L.] CNR IMEM Inst, I-43100 Parma, Italy. [Serenyi, M.; Khanh, N. Q.] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary. [Csik, A.] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary. [Erdelyi, Z.; Beke, D. L.] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary. [Boyen, H. -G.] Hasselt Univ, Inst Mat Res, Diepenbeek, Belgium.-
local.publisher.placeRADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.apsusc.2012.05.030-
dc.identifier.isi000314881900008-
dc.identifier.eissn1873-5584-
local.uhasselt.internationalyes-
item.fulltextWith Fulltext-
item.fullcitationFrigeri, C.; Serenyi, M.; Khanh, N. Q.; Csik, A.; Nasi, L.; Erdelyi, Z.; Beke, D. L. & BOYEN, Hans-Gerd (2013) Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing. In: APPLIED SURFACE SCIENCE, 267, p. 30-34.-
item.accessRightsRestricted Access-
item.contributorFrigeri, C.-
item.contributorSerenyi, M.-
item.contributorKhanh, N. Q.-
item.contributorCsik, A.-
item.contributorNasi, L.-
item.contributorErdelyi, Z.-
item.contributorBeke, D. L.-
item.contributorBOYEN, Hans-Gerd-
item.validationecoom 2014-
crisitem.journal.issn0169-4332-
crisitem.journal.eissn1873-5584-
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