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http://hdl.handle.net/1942/1487
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DC Field | Value | Language |
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dc.contributor.author | Van Gestel, D. | - |
dc.contributor.author | GORDON, Ivan | - |
dc.contributor.author | Carnel, L. | - |
dc.contributor.author | Pinckney, L. | - |
dc.contributor.author | Mayolet, A. | - |
dc.contributor.author | D'HAEN, Jan | - |
dc.contributor.author | Beaucarne, Guy | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2007-05-11T09:07:10Z | - |
dc.date.available | 2007-05-11T09:07:10Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Amorphous and Polycrystalline Thin Film Silicon Science and Technology. p. A26-04-.... | - |
dc.identifier.uri | http://hdl.handle.net/1942/1487 | - |
dc.description.abstract | Efficient polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Alumnium-induced crytallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperature seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-SI solar cells. AIC needs layers made on these substrates showed in-plane grain sizes up to 16 μm. Columnar growth was observed on these seed layers during high-temperature epitaxy. First pc-Si solar cells made on glass-ceramic substrates in substrate configuration showed efficiencies up to 4.5%, fill factors up to 75% and open-circuit voltage (Voc) values up to 536 mV. This is the highest Voc reported for pc-Si solar cells on glass and the best cell efficiency reported for cells made by AIC on glass. | - |
dc.language.iso | en | - |
dc.publisher | MRS | - |
dc.relation.ispartofseries | MRS symposium Proceedings | - |
dc.subject.other | photovoltaic; grain boundaries; chemical vapor deposition (CVD)(deposition) | - |
dc.title | Thin-film polycrystalline-silicon solar cells on high-temperature glass made by aluminium-induced crystallization of amorphous silicon | - |
dc.type | Proceedings Paper | - |
local.bibliographicCitation.conferencedate | 2006 | - |
local.bibliographicCitation.conferencename | Amorphous and Polycrystalline Thin Film Silicon Science and Technology | - |
local.bibliographicCitation.conferenceplace | San Francisco, USA | - |
dc.identifier.spage | A26-04 | - |
local.bibliographicCitation.jcat | C1 | - |
local.type.refereed | Refereed | - |
local.type.specified | Proceedings Paper | - |
local.relation.ispartofseriesnr | 910 | - |
dc.bibliographicCitation.oldjcat | C1 | - |
dc.identifier.isi | 000245670700103 | - |
local.bibliographicCitation.btitle | Amorphous and Polycrystalline Thin Film Silicon Science and Technology | - |
item.fulltext | No Fulltext | - |
item.contributor | Van Gestel, D. | - |
item.contributor | GORDON, Ivan | - |
item.contributor | Carnel, L. | - |
item.contributor | Pinckney, L. | - |
item.contributor | Mayolet, A. | - |
item.contributor | D'HAEN, Jan | - |
item.contributor | Beaucarne, Guy | - |
item.contributor | POORTMANS, Jef | - |
item.fullcitation | Van Gestel, D.; GORDON, Ivan; Carnel, L.; Pinckney, L.; Mayolet, A.; D'HAEN, Jan; Beaucarne, Guy & POORTMANS, Jef (2006) Thin-film polycrystalline-silicon solar cells on high-temperature glass made by aluminium-induced crystallization of amorphous silicon. In: Amorphous and Polycrystalline Thin Film Silicon Science and Technology. p. A26-04-..... | - |
item.accessRights | Closed Access | - |
item.validation | ecoom 2008 | - |
Appears in Collections: | Research publications |
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