Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/1487
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dc.contributor.authorVan Gestel, D.-
dc.contributor.authorGORDON, Ivan-
dc.contributor.authorCarnel, L.-
dc.contributor.authorPinckney, L.-
dc.contributor.authorMayolet, A.-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorBeaucarne, Guy-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2007-05-11T09:07:10Z-
dc.date.available2007-05-11T09:07:10Z-
dc.date.issued2006-
dc.identifier.citationAmorphous and Polycrystalline Thin Film Silicon Science and Technology. p. A26-04-....-
dc.identifier.urihttp://hdl.handle.net/1942/1487-
dc.description.abstractEfficient polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Alumnium-induced crytallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperature seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-SI solar cells. AIC needs layers made on these substrates showed in-plane grain sizes up to 16 μm. Columnar growth was observed on these seed layers during high-temperature epitaxy. First pc-Si solar cells made on glass-ceramic substrates in substrate configuration showed efficiencies up to 4.5%, fill factors up to 75% and open-circuit voltage (Voc) values up to 536 mV. This is the highest Voc reported for pc-Si solar cells on glass and the best cell efficiency reported for cells made by AIC on glass.-
dc.language.isoen-
dc.publisherMRS-
dc.relation.ispartofseriesMRS symposium Proceedings-
dc.subject.otherphotovoltaic; grain boundaries; chemical vapor deposition (CVD)(deposition)-
dc.titleThin-film polycrystalline-silicon solar cells on high-temperature glass made by aluminium-induced crystallization of amorphous silicon-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedate2006-
local.bibliographicCitation.conferencenameAmorphous and Polycrystalline Thin Film Silicon Science and Technology-
local.bibliographicCitation.conferenceplaceSan Francisco, USA-
dc.identifier.spageA26-04-
local.bibliographicCitation.jcatC1-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr910-
dc.bibliographicCitation.oldjcatC1-
dc.identifier.isi000245670700103-
local.bibliographicCitation.btitleAmorphous and Polycrystalline Thin Film Silicon Science and Technology-
item.fulltextNo Fulltext-
item.contributorVan Gestel, D.-
item.contributorGORDON, Ivan-
item.contributorCarnel, L.-
item.contributorPinckney, L.-
item.contributorMayolet, A.-
item.contributorD'HAEN, Jan-
item.contributorBeaucarne, Guy-
item.contributorPOORTMANS, Jef-
item.fullcitationVan Gestel, D.; GORDON, Ivan; Carnel, L.; Pinckney, L.; Mayolet, A.; D'HAEN, Jan; Beaucarne, Guy & POORTMANS, Jef (2006) Thin-film polycrystalline-silicon solar cells on high-temperature glass made by aluminium-induced crystallization of amorphous silicon. In: Amorphous and Polycrystalline Thin Film Silicon Science and Technology. p. A26-04-.....-
item.accessRightsClosed Access-
item.validationecoom 2008-
Appears in Collections:Research publications
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