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|Title:||Silver-assisted Etching of Silicon Nanowires||Authors:||GIELIS, Sven
van der Veen, M. H.
De Gendt, S.
Vereecken, P. M.
|Issue Date:||2011||Publisher:||ELECTROCHEMICAL SOC INC||Source:||Djokic, S Stickney, JL (Ed.). ELECTROLESS DEPOSITION PRINCIPLES, ACTIVATION, AND APPLICATIONS, p. 49-58||Series/Report:||ECS Transactions||Abstract:||Silicon nanowires are attractive for photovoltaic applications where they can be used along with bulk silicon in an all-Si tandem solar cell. The larger band gap, caused by the quantum confinement effect in narrow silicon nanowires (<5 nm), provides a more efficient light absorption. The most common processes for nanowire synthesis are rather expensive and require high temperatures, high vacuum and hazardous precursors. A simple and cheap method is the silver-assisted electroless Si etching process. A silicon substrate is selectively etched in HF based solutions with the help of silver particles which are deposited beforehand or in-situ. Both the etch process and the deposition of silver particles were studied. The silver nanoparticles were deposited by electroless deposition (galvanic displacement) from HF and non-HF containing solutions. The effects of silver coverage, Si doping and illumination on the Si etching process were investigated. The experimental observations were used to get more insight into the mechanism.||Notes:||Gielis, S (reprint author), Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium.||Keywords:||Electrochemistry||Document URI:||http://hdl.handle.net/1942/15312||ISBN:||978-1-60768-224-0||DOI:||10.1149/1.3551490||ISI #:||000309449900005||Category:||C1||Type:||Proceedings Paper||Validations:||ecoom 2014|
|Appears in Collections:||Research publications|
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