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Title: | Silver-assisted Etching of Silicon Nanowires | Authors: | GIELIS, Sven van der Veen, M. H. De Gendt, S. Vereecken, P. M. |
Issue Date: | 2011 | Publisher: | ELECTROCHEMICAL SOC INC | Source: | Djokic, S Stickney, JL (Ed.). ELECTROLESS DEPOSITION PRINCIPLES, ACTIVATION, AND APPLICATIONS, p. 49-58 | Series/Report: | ECS Transactions | Abstract: | Silicon nanowires are attractive for photovoltaic applications where they can be used along with bulk silicon in an all-Si tandem solar cell. The larger band gap, caused by the quantum confinement effect in narrow silicon nanowires (<5 nm), provides a more efficient light absorption. The most common processes for nanowire synthesis are rather expensive and require high temperatures, high vacuum and hazardous precursors. A simple and cheap method is the silver-assisted electroless Si etching process. A silicon substrate is selectively etched in HF based solutions with the help of silver particles which are deposited beforehand or in-situ. Both the etch process and the deposition of silver particles were studied. The silver nanoparticles were deposited by electroless deposition (galvanic displacement) from HF and non-HF containing solutions. The effects of silver coverage, Si doping and illumination on the Si etching process were investigated. The experimental observations were used to get more insight into the mechanism. | Notes: | Gielis, S (reprint author), Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. | Keywords: | Electrochemistry | Document URI: | http://hdl.handle.net/1942/15312 | ISBN: | 978-1-60768-224-0 | DOI: | 10.1149/1.3551490 | ISI #: | 000309449900005 | Category: | C1 | Type: | Proceedings Paper | Validations: | ecoom 2014 |
Appears in Collections: | Research publications |
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