Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/15379
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dc.contributor.authorPOBEDINSKAS, Paulius-
dc.contributor.authorDEGUTIS, Giedrius-
dc.contributor.authorDEXTERS, Wim-
dc.contributor.authorJANSSEN, Wiebke-
dc.contributor.authorJANSSENS, Stoffel-
dc.contributor.authorCONINGS, Bert-
dc.contributor.authorRUTTENS, Bart-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorBOYEN, Hans-Gerd-
dc.contributor.authorHARDY, An-
dc.contributor.authorVAN BAEL, Marlies-
dc.contributor.authorHAENEN, Ken-
dc.date.accessioned2013-08-14T14:05:48Z-
dc.date.available2013-08-14T14:05:48Z-
dc.date.issued2013-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 102 (20), p. 201609-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/15379-
dc.description.abstractThe surface of polycrystalline aluminum nitride (AlN) thin films is exposed to different gas discharge plasmas (N-2, O-2, and CF4) followed by a water-based colloidal seeding of ultra-dispersed nanodiamond particles. Fluorination of the AlN surface enhances the seeding density, whereas the oxidized surface does not yield any nucleation sites. In the former case, the seeding density improves by almost three orders of magnitude as compared to the untreated and N-2 pretreated samples, and allows to grow pinhole-free nanocrystalline diamond film on AlN. Finally, we demonstrate a route towards selective diamond growth on AlN thin films by employing CF4 plasma pretreatment together with photolithography. (C) 2013 AIP Publishing LLC.-
dc.description.sponsorshipThis work was financially supported by the Research Foundation Flanders (FWO) (G.0568.10N and G.0456.12), the EU FP7 through Marie Curie ITN "MATCON" (PITN-GA-2009-238201) and the Collaborative Project "MOLESOL" (No. 256617), and the Methusalem "NANO network."-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subject.otherPhysics, Applied-
dc.titleSurface plasma pretreatment for enhanced diamond nucleation on AlN-
dc.typeJournal Contribution-
dc.identifier.issue20-
dc.identifier.spage201609-
dc.identifier.volume102-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notes[Pobedinskas, P.; Degutis, G.; Dexters, W.; Janssen, W.; Janssens, S. D.; Conings, B.; Ruttens, B.; D'Haen, J.; Boyen, H. -G.; Hardy, A.; Van Bael, M. K.; Haenen, K.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Pobedinskas, P.; Janssen, W.; Janssens, S. D.; Ruttens, B.; D'Haen, J.; Boyen, H. -G.; Hardy, A.; Van Bael, M. K.; Haenen, K.] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. paulius.pobedinskas@uhasselt.be; ken.haenen@uhasselt.be-
local.publisher.placeMELVILLE-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1063/1.4807591-
dc.identifier.isi000320619300030-
item.fullcitationPOBEDINSKAS, Paulius; DEGUTIS, Giedrius; DEXTERS, Wim; JANSSEN, Wiebke; JANSSENS, Stoffel; CONINGS, Bert; RUTTENS, Bart; D'HAEN, Jan; BOYEN, Hans-Gerd; HARDY, An; VAN BAEL, Marlies & HAENEN, Ken (2013) Surface plasma pretreatment for enhanced diamond nucleation on AlN. In: APPLIED PHYSICS LETTERS, 102 (20), p. 201609.-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
item.validationecoom 2014-
item.contributorPOBEDINSKAS, Paulius-
item.contributorDEGUTIS, Giedrius-
item.contributorDEXTERS, Wim-
item.contributorJANSSEN, Wiebke-
item.contributorJANSSENS, Stoffel-
item.contributorCONINGS, Bert-
item.contributorRUTTENS, Bart-
item.contributorD'HAEN, Jan-
item.contributorBOYEN, Hans-Gerd-
item.contributorHARDY, An-
item.contributorVAN BAEL, Marlies-
item.contributorHAENEN, Ken-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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