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http://hdl.handle.net/1942/15422
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DC Field | Value | Language |
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dc.contributor.author | VAN GOMPEL, Matthias | - |
dc.contributor.author | CONINGS, Bert | - |
dc.contributor.author | JIMENEZ MONROY, Kathia | - |
dc.contributor.author | D'HAEN, Jan | - |
dc.contributor.author | GILISSEN, Koen | - |
dc.contributor.author | D'OLIESLAEGER, Marc | - |
dc.contributor.author | VAN BAEL, Marlies | - |
dc.contributor.author | WAGNER, Patrick | - |
dc.date.accessioned | 2013-08-21T09:42:13Z | - |
dc.date.available | 2013-08-21T09:42:13Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 210 (5), p. 1013-1018 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | http://hdl.handle.net/1942/15422 | - |
dc.description.abstract | Transparent conductive metal oxides are interesting materials for various optoelectronic applications including solar cells and flat panel displays. This study focuses on the in situ deposition of aluminum-doped zinc oxide (AZO) thin layers on c-axis oriented sapphire substrates by dc sputtering and on the structural and electrical characterization. The films have a typical thickness of 90nm and a roughness of 10nm root mean square. An Al/Zn ratio of 2.4at% Al was determined by X-ray photoelectron spectroscopy. X-ray diffraction shows a preferential growth in the (0002) c-axis direction. Films have an average transparency of 90% in the visible-light spectrum, a room-temperature resistivity of 3.7x103cm and a carrier mobility of 6.7 cm(2) V-1 s(-1). | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject.other | DC sputtering; electrical transport properties; transparent conductive oxides; X-ray diffraction | - |
dc.subject.other | Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.title | Preparation of epitaxial films of the transparent conductive oxide Al:ZnO by reactive high-pressure sputtering in Ar/O2 mixtures | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 1018 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 1013 | - |
dc.identifier.volume | 210 | - |
local.format.pages | 6 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. | - |
local.publisher.place | WEINHEIM | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1002/pssa.201200986 | - |
dc.identifier.isi | 000319151900030 | - |
item.fullcitation | VAN GOMPEL, Matthias; CONINGS, Bert; JIMENEZ MONROY, Kathia; D'HAEN, Jan; GILISSEN, Koen; D'OLIESLAEGER, Marc; VAN BAEL, Marlies & WAGNER, Patrick (2013) Preparation of epitaxial films of the transparent conductive oxide Al:ZnO by reactive high-pressure sputtering in Ar/O2 mixtures. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 210 (5), p. 1013-1018. | - |
item.contributor | VAN GOMPEL, Matthias | - |
item.contributor | CONINGS, Bert | - |
item.contributor | JIMENEZ MONROY, Kathia | - |
item.contributor | D'HAEN, Jan | - |
item.contributor | GILISSEN, Koen | - |
item.contributor | D'OLIESLAEGER, Marc | - |
item.contributor | VAN BAEL, Marlies | - |
item.contributor | WAGNER, Patrick | - |
item.validation | ecoom 2014 | - |
item.accessRights | Restricted Access | - |
item.fulltext | With Fulltext | - |
crisitem.journal.issn | 1862-6300 | - |
crisitem.journal.eissn | 1862-6319 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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van gompel 1.pdf Restricted Access | Published version | 387.77 kB | Adobe PDF | View/Open Request a copy |
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