Radiometric characteristics of new diamond PIN photodiodes

Abstract

New PIN photodiode devices based on CVD diamond have been produced showing high responsivity in a narrow bandpass around 200 nm. A set of measurement campaigns was carried out to obtain their XUV-to-VIS characterization (responsivity, stability, linearity, homogeneity). The responsivity has been measured from the XUV to the NIR, in the wavelength range of 1 nm to 1127 nm (i.e. 1240 to 1.1 eV). The diamond detectors exhibit a high responsivity of 10 to 30 mA W−1 around 200 nm and demonstrate a visible rejection ratio (200 nm versus 500 nm) of six orders of magnitude. We show that these PIN diamond photodiodes are sensitive sensors in the 200 to 220 nm range, stable under brief irradiation with a good linearity and homogeneity. They will be used for the first time in a solar physics space instrument LYRA, the Large Yield RAdiometer.