Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/16702Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | POBEDINSKAS, Paulius | - |
| dc.contributor.author | DEGUTIS, Giedrius | - |
| dc.contributor.author | DEXTERS, Wim | - |
| dc.contributor.author | HARDY, An | - |
| dc.contributor.author | VAN BAEL, Marlies | - |
| dc.contributor.author | HAENEN, Ken | - |
| dc.date.accessioned | 2014-04-28T10:53:14Z | - |
| dc.date.available | 2014-04-28T10:53:14Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, 104 (8), (ART N° 081917) | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/1942/16702 | - |
| dc.description.abstract | Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E1(TO) and E22 phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E1(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E22 peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them. | - |
| dc.description.sponsorship | Research Foundation Flanders (FWO) (G.0568.10N) and the EU FP7 through Marie Curie ITN “MATCON” (PITN-GA-2009-238201). | - |
| dc.language.iso | en | - |
| dc.publisher | AIP Publishing | - |
| dc.rights | Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. 2014 AIP Publishing LLC | - |
| dc.subject.other | AlN films; III-V semiconductors; diamond; phonons; plasma materials processing; thin film growth | - |
| dc.title | Influence of hydrogen and hydrogen/methane plasmas on AlN thin films | - |
| dc.type | Journal Contribution | - |
| dc.identifier.issue | 8 | - |
| dc.identifier.volume | 104 | - |
| local.format.pages | 4 | - |
| local.bibliographicCitation.jcat | A1 | - |
| local.publisher.place | 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 | - |
| dc.relation.references | [1] V. Mortet, O. A. Williams, and K. Haenen, Phys. Status Solidi A 205, 1009 (2008). http://dx.doi.org/10.1002/pssa.200777502 [2] J. G. Rodríguez-Madrid, G. F. Iriarte, J. Pedrós, O. A. Williams, D. Brink, and F. Calle, IEEE Electron Device Lett. 33, 495 (2012). http://dx.doi.org/10.1109/LED.2012.2183851 [3] E. L. H. Thomas, G. W. Nelson, S. Mandal, J. S. Foord, and O. A. Williams, Carbon 68, 473 (2014). http://dx.doi.org/10.1016/j.carbon.2013.11.023 [4] O. A. Williams, Diamond Relat. Mater. 20, 621 (2011). http://dx.doi.org/10.1016/j.diamond.2011.02.015 [5] V. Mortet, O. Elmazria, M. Nesladek, J. D'Haen, G. Vanhoyland, M. Elhakiki, A. Tajani, E. Bustarret, E. Gheeraert, M. D'Olieslaeger, and P. Alnot, Diamond Relat. Mater. 12, 723 (2003). http://dx.doi.org/10.1016/S0925-9635(02)00316-3 [6] P. Pobedinskas, G. Degutis, W. Dexters, W. Janssen, S. D. Janssens, B. Conings, B. Ruttens, J. D'Haen, H.-G. Boyen, A. Hardy, M. K. Van Bael, and K. Haenen, Appl. Phys. Lett. 102, 201609 (2013). http://dx.doi.org/10.1063/1.4807591 [7] J. Hees, N. Heidrich, W. Pletschen, R. E. Sah, M. Wolfer, O. A. Williams, V. Lebedev, C. E. Nebel, and O. Ambacher, Nanotechnology 24, 025601 (2013). http://dx.doi.org/10.1088/0957-4484/24/2/025601 [8] Y. Kumagai, K. Akiyama, R. Togashi, H. Murakami, M. Takeuchi, T. Kinoshita, K. Takada, Y. Aoyagi, and A. Koukitu, J. Cryst. Growth 305, 366 (2007). http://dx.doi.org/10.1016/j.jcrysgro.2007.04.005 [9] P. Pobedinskas, J.-C. Bolsée, W. Dexters, B. Ruttens, V. Mortet, J. D'Haen, J. V. Manca, and K. Haenen, Thin Solid Films 522, 180 (2012). http://dx.doi.org/10.1016/j.tsf.2012.08.015 [10] P. Pobedinskas, B. Ruttens, J. D'Haen, and K. Haenen, Appl. Phys. Lett. 100, 191906 (2012). http://dx.doi.org/10.1063/1.4711773 [11] J. E. Sansonetti and W. C. Martin, J. Phys. Chem. Ref. Data 34, 1559 (2005). http://dx.doi.org/10.1063/1.1800011 [12] U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu, Phys. Status Solidi C 5, 3042 (2008). http://dx.doi.org/10.1002/pssc.200779203 [13] M. Kazan, J. Appl. Phys. 102, 073532 (2007). http://dx.doi.org/10.1063/1.2795579 [14] A. Sanz-Hervás, E. Iborra, M. Clement, J. Sangrador, and M. Aguilar, Diamond Relat. Mater. 12, 1186 (2003). http://dx.doi.org/10.1016/S0925-9635(02)00228-5 [15] T. Metzger, R. Höpler, E. Born, O. Ambacher, M. Stutzmann, R. Stömmer, M. Schuster, H. Göbel, S. Christiansen, M. Albrecht, and H. P. Strunk, Philos. Mag. A 77, 1013 (1998). http://dx.doi.org/10.1080/01418619808221225 [16] J.-M. Wagner and F. Bechstedt, Phys. Rev. B 66, 115202 (2002). http://dx.doi.org/10.1103/PhysRevB.66.115202 [17] J. M. Zavada, R. G. Wilson, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett. 64, 2724 (1994). http://dx.doi.org/10.1063/1.111455 [18] B. W. Sheldon, A. Rajamani, A. Bhandari, E. Chason, S. K. Hong, and R. Beresford, J. Appl. Phys. 98, 043509 (2005). http://dx.doi.org/10.1063/1.1994944 [19] G. C. A. M. Janssen, M. M. Abdalla, F. van Keulen, B. R. Pujada, and B. van Venrooy, Thin Solid Films 517, 1858 (2009). http://dx.doi.org/10.1016/j.tsf.2008.07.014 [20] L. E. McNeil, M. Grimsditch, and R. H. French, J. Am. Ceram. Soc. 76, 1132 (1993). http://dx.doi.org/10.1111/j.1151-2916.1993.tb03730.x [21] S. Limpijumnong and C. G. Van de Walle, Phys. Status Solidi B 228, 303 (2001). http://dx.doi.org/10.1002/1521-3951(200111)228:1<303::AID-PSSB303>3.0.CO;2-A | - |
| local.type.refereed | Refereed | - |
| local.type.specified | Article | - |
| local.bibliographicCitation.artnr | 081917 | - |
| dc.identifier.doi | 10.1063/1.4867022 | - |
| dc.identifier.isi | 000332619100052 | - |
| dc.identifier.eissn | 1077-3118 | - |
| local.uhasselt.international | no | - |
| item.validation | ecoom 2015 | - |
| item.contributor | POBEDINSKAS, Paulius | - |
| item.contributor | DEGUTIS, Giedrius | - |
| item.contributor | DEXTERS, Wim | - |
| item.contributor | HARDY, An | - |
| item.contributor | VAN BAEL, Marlies | - |
| item.contributor | HAENEN, Ken | - |
| item.fullcitation | POBEDINSKAS, Paulius; DEGUTIS, Giedrius; DEXTERS, Wim; HARDY, An; VAN BAEL, Marlies & HAENEN, Ken (2014) Influence of hydrogen and hydrogen/methane plasmas on AlN thin films. In: APPLIED PHYSICS LETTERS, 104 (8), (ART N° 081917). | - |
| item.fulltext | With Fulltext | - |
| item.accessRights | Restricted Access | - |
| crisitem.journal.issn | 0003-6951 | - |
| crisitem.journal.eissn | 1077-3118 | - |
| Appears in Collections: | Research publications | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| P.Pobedinskas, APL 104, 081917 (2014).pdf Restricted Access | Published version | 967.54 kB | Adobe PDF | View/Open Request a copy |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.