Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/16978
Title: Diamond and Cubic Boron Nitride: Properties, Growth and Applications
Authors: Soltani, A.
Talbi, A.
MORTET, Vincent 
BenMoussa, A.
Zhang, W. J.
Gerbedoen, J-C
De Jaeger, J-C
Gokarna, A.
HAENEN, Ken 
WAGNER, Patrick 
Issue Date: 2010
Publisher: AMER INST PHYSICS
Source: Ferro, G.; Siffert, P. (Ed.). 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, p. 191-196
Series/Report: AIP Conference Proceedings
Abstract: Since their first synthesis, cubic boron nitride (c-BN) and diamond thin films have triggered a vivid interest in these wide band gap materials for many different applications. Because of superior properties, c-BN and diamond can be applied in optic, electronic and acoustic for high performances devices. In this discussion, we first describe briefly the properties of c-BN and diamond and we review both the growth techniques and the progresses achieved in the synthesis of c-BN and diamond, and in a second part, characteristics of new c-BN and diamond UV detectors for solar observation are reported. These photo-detectors present extremely low dark current, high breakdown voltage, high responsivity and stability under UV irradiation. Finally, diamond based acoustic devices and sensors are presented. High frequency acoustic wave devices can be design for high frequency filtering or sensing applications. Diamond/AlN micro-cantilevers are excellent platform for sensor applications.
Notes: [Soltani, A.; Talbi, A.; Gerbedoen, J-C; De Jaeger, J-C; Gokarna, A.] Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France.
Keywords: Physics, Applied; Physics, Condensed Matter;diamond; cBN; AlN; sputtering; CVD; doping; photodetector; RF resonator; actuator; sensor
Document URI: http://hdl.handle.net/1942/16978
ISBN: 978-0-7354-0847-0
ISI #: 000286950900046
Category: C1
Type: Proceedings Paper
Appears in Collections:Research publications

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