Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/17052
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dc.contributor.authorGranata, Stefano Nicola-
dc.contributor.authorBearda, Twan-
dc.contributor.authorBeaucarne, Guy-
dc.contributor.authorAbdulraheem, Yaser-
dc.contributor.authorGORDON, Ivan-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorMertens, Robert-
dc.date.accessioned2014-07-30T09:13:54Z-
dc.date.available2014-07-30T09:13:54Z-
dc.date.issued2014-
dc.identifier.citationPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 8 (5), p. 395-398-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/1942/17052-
dc.description.abstractA possible scenario for wafer-based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state-of-the-art a-Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross-linking of a silicone adhesive by means of an O-2 plasma and it is successfully tested on three different silicones. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)-
dc.description.sponsorshipImec's industrial affiliation program; KFAS (grant number 2012-150-801)-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subject.othermaterials science, multidisciplinary; physics, applied; physics, condensed Matter-
dc.subject.othersolar modules; surface passivation; amorphous silicon; silicone; thin films; solar cells-
dc.titleSilicone oxidation for a-Si:H passivation of wafers bonded to glass-
dc.typeJournal Contribution-
dc.identifier.epage398-
dc.identifier.issue5-
dc.identifier.spage395-
dc.identifier.volume8-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notes[Granata, Stefano Nicola; Poortmans, Jef; Mertens, Robert] Katholieke Univ Leuven, ESAT, B-3001 Heverlee, Belgium. [Granata, Stefano Nicola; Bearda, Twan; Gordon, Ivan; Poortmans, Jef; Mertens, Robert] IMEC, B-3001 Heverlee, Belgium. [Beaucarne, Guy] Dow Corning, B-7180 Seneffe, Belgium. [Abdulraheem, Yaser] Kuwait Univ, Dept Elect Engn, Safat 13060, Kuwait. [Poortmans, Jef] Hasselt Univ, B-3590 Diepenbeek, Belgium.-
local.publisher.placeWEINHEIM-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1002/pssr.201409081-
dc.identifier.isi000336495000004-
item.fulltextNo Fulltext-
item.fullcitationGranata, Stefano Nicola; Bearda, Twan; Beaucarne, Guy; Abdulraheem, Yaser; GORDON, Ivan; POORTMANS, Jef & Mertens, Robert (2014) Silicone oxidation for a-Si:H passivation of wafers bonded to glass. In: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 8 (5), p. 395-398.-
item.accessRightsClosed Access-
item.contributorGranata, Stefano Nicola-
item.contributorBearda, Twan-
item.contributorBeaucarne, Guy-
item.contributorAbdulraheem, Yaser-
item.contributorGORDON, Ivan-
item.contributorPOORTMANS, Jef-
item.contributorMertens, Robert-
item.validationecoom 2015-
crisitem.journal.issn1862-6254-
crisitem.journal.eissn1862-6270-
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