Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18033
Title: Process-Induced Degradation of SiO2 and a-Si:H Passivation Layers for Photovoltaic Applications
Authors: O'Sullivan, B. J.
Bearda, Twan
Nadupalli, S.
LABIE, Roger 
Baert, K.
Gordon, I.
POORTMANS, Jef 
Issue Date: 2014
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Source: IEEE JOURNAL OF PHOTOVOLTAICS, 4 (5), p. 1197-1203
Abstract: The passivation characteristics of thermally grown silicon dioxide (SiO2) and hydrogenated amorphous silicon (a-Si:H) layers are investigated, using a combination of photoluminescence and capacitance-voltage analysis techniques. Key findings are the significant passivation degradation of SiO2 and a-Si:H layers induced by metallization through electron beam evaporation. The degradation correlates with an increase in silicon dangling bond defect density at the interface with silicon (for both SiO2 and a-Si:H) or in the passivation layer (a-Si:H). Performing the metallization by thermal evaporation is an effective method to avoid such process-induced damage, as is forming gas annealing at 450 degrees C, which effectively recovers the interface characteristics of SiO2 layers. Deposition of amorphous silicon on a thermal SiO2 layer induces bulk and interface defects in the SiO2 layer-but in this case, a 450 degrees C forming gas anneal is not possible due to the thermal budget limitations of a-Si:H, thereby posing problems for solar cell structures which rely on a combination of PECVD a-Si:H and thermal SiO2 passivation layers.
Notes: [O'Sullivan, B. J.; Bearda, T.; Nadupalli, S.; Labie, R.; Baert, K.; Gordon, I.; Poortmans, J.] IMEC, B-3001 Leuven, Belgium. [Poortmans, J.] Katholieke Univ Leuven, B-3000 Leuven, Belgium. [Poortmans, J.] Univ Hasselt, B-3590 Diepenbeek, Belgium.
Keywords: Capacitance--voltage (C--V); Capacitance??voltage (C??V); dangling bond defects; passivation layer; photoluminescence (PL); recombination;Capacitance-voltage (C-V); dangling bond defects; passivation layer; photoluminescence (PL); recombination
Document URI: http://hdl.handle.net/1942/18033
ISSN: 2156-3381
e-ISSN: 2156-3403
DOI: 10.1109/JPHOTOV.2014.2326711
ISI #: 000344542500004
Category: A1
Type: Journal Contribution
Validations: ecoom 2015
Appears in Collections:Research publications

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