Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18686
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dc.contributor.authorMeddeb, H.-
dc.contributor.authorBearda, Twan-
dc.contributor.authorPayo, M. Recaman-
dc.contributor.authorAbdelwahab, I.-
dc.contributor.authorAbdulraheem, Yaser-
dc.contributor.authorEzzaouia, H.-
dc.contributor.authorGORDON, Ivan-
dc.contributor.authorSzlufcik, J.-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2015-04-13T12:44:22Z-
dc.date.available2015-04-13T12:44:22Z-
dc.date.issued2015-
dc.identifier.citationAPPLIED SURFACE SCIENCE, 328, p. 140-145-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/1942/18686-
dc.description.abstractThe influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm(2) and below. (C) 2014 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights© 2014 Elsevier B.V. All rights reserved.-
dc.subject.otherwet chemical cleaning; surface treatment; intrinsic amorphous silicon; boron emitter; passivation; annealing-
dc.subject.otherWet chemical cleaning; Surface treatment; Intrinsic amorphous silicon; Boron emitter; Passivat ion; Annealing-
dc.titleWet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation-
dc.typeJournal Contribution-
dc.identifier.epage145-
dc.identifier.spage140-
dc.identifier.volume328-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notes[Meddeb, H.] KACST, Intel Consortium Ctr Excellence Nano Mfg Applicat, Riyadh, Saudi Arabia. [Meddeb, H.; Bearda, T.; Payo, M. Recaman; Abdelwahab, I.; Gordon, I.; Szlufcik, J.; Poortmans, J.] IMEC, B-3001 Louvain, Belgium. [Meddeb, H.; Ezzaouia, H.] Res & Technol Ctr Energy, Photovolta Dept, Tunis 2050, Tunisia. [Meddeb, H.] Univ Carthage, Fac Sci, Bizerte, Tunisia. [Abdulraheem, Y.] Kuwait Univ, Coll Engn & Petr, Dept Elect Engn, Safat 13060, Kuwait. [Poortmans, J.] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Louvain, Belgium. [Poortmans, J.] Univ Hasselt, Fac Sci, B-3500 Hasselt, Belgium. hosny.meddeb@gmail.com-
local.publisher.placeAMSTERDAM-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.apsusc.2014.11.180-
dc.identifier.isi000349615800016-
item.accessRightsRestricted Access-
item.contributorMeddeb, H.-
item.contributorBearda, Twan-
item.contributorPayo, M. Recaman-
item.contributorAbdelwahab, I.-
item.contributorAbdulraheem, Yaser-
item.contributorEzzaouia, H.-
item.contributorGORDON, Ivan-
item.contributorSzlufcik, J.-
item.contributorPOORTMANS, Jef-
item.fulltextWith Fulltext-
item.fullcitationMeddeb, H.; Bearda, Twan; Payo, M. Recaman; Abdelwahab, I.; Abdulraheem, Yaser; Ezzaouia, H.; GORDON, Ivan; Szlufcik, J. & POORTMANS, Jef (2015) Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation. In: APPLIED SURFACE SCIENCE, 328, p. 140-145.-
item.validationecoom 2016-
crisitem.journal.issn0169-4332-
crisitem.journal.eissn1873-5584-
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