Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18816
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dc.contributor.authorMORTET, Vincent-
dc.contributor.authorPernot, J.-
dc.contributor.authorJomard, F.-
dc.contributor.authorSoltani, A.-
dc.contributor.authorREMES, Zdenek-
dc.contributor.authorBarjon, Julien-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorHAENEN, Ken-
dc.date.accessioned2015-04-30T12:07:02Z-
dc.date.available2015-04-30T12:07:02Z-
dc.date.issued2015-
dc.identifier.citationDIAMOND AND RELATED MATERIALS (53), p. 29-34-
dc.identifier.issn0925-9635-
dc.identifier.urihttp://hdl.handle.net/1942/18816-
dc.description.abstractBoron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed by scanning electron microscopy consists of (100) and (113) micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation of boron determined by electrical measurements. A maximum mobility of 528 cm(2) V-1 s(-1) was measured at room temperature for a charge carrier concentration of 1.1 10(13) cm(-3). Finally, properties of boron doped (110) diamond layers are compared with layers on (100) and (111) orientated substrates. (c) 2015 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis work was supported by the Academy of Sciences of the Czech Republic, Czech Science Foundation (GACR) Grant ID: GACR 13-31783S, ESF European social fund in the Czech Republic Investments in Education Development - Grant No. CZ.1.07/2.3.00/20.0306, Research Foundation - Flanders (FWO) (G.0456.12N, VS.017.13N) and the Methusalem "NANO network Antwerpen-Hasselt". J.E. Purkyne fellowship awarded to Vincent Mortet by Academy of Sciences of the Czech Republic.This work was supported by the Academy of Sciences of the Czech Republic, Czech Science Foundation (GACR) Grant ID: GACR 13-31783S, ESF European social fund in the Czech Republic Investments in Education Development - Grant No. CZ.1.07/2.3.00/20.0306, Research Foundation - Flanders (FWO) (G.0456.12N, VS.017.13N) and the Methusalem "NANO network Antwerpen-Hasselt". J.E. Purkyne fellowship awarded to Vincent Mortet by Academy of Sciences of the Czech Republic.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.rights© 2015 Elsevier B.V. All rights reserved.-
dc.subject.otherDiamond; Boron; Doping; Crystalline orientation-
dc.subject.otherdiamond; boron; doping; crystalline orientation-
dc.titleProperties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates-
dc.typeJournal Contribution-
dc.identifier.epage34-
dc.identifier.issue53-
dc.identifier.spage29-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notesCorresponding author at: Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, 182 21 Prague 8, Czech Republic.-
local.publisher.placeLAUSANNE-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.diamond.2015.01.006-
dc.identifier.isi000352046700005-
item.fullcitationMORTET, Vincent; Pernot, J.; Jomard, F.; Soltani, A.; REMES, Zdenek; Barjon, Julien; D'HAEN, Jan & HAENEN, Ken (2015) Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates. In: DIAMOND AND RELATED MATERIALS (53), p. 29-34.-
item.fulltextWith Fulltext-
item.accessRightsRestricted Access-
item.validationecoom 2016-
item.contributorBarjon, Julien-
item.contributorMORTET, Vincent-
item.contributorREMES, Zdenek-
item.contributorJomard, F.-
item.contributorHAENEN, Ken-
item.contributorSoltani, A.-
item.contributorPernot, J.-
item.contributorD'HAEN, Jan-
crisitem.journal.issn0925-9635-
crisitem.journal.eissn1879-0062-
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