Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18839
Title: Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells
Authors: Oueslati, S.
BRAMMERTZ, Guy 
Buffiere, M.
ElAnzeery, H.
Touayar, O.
Koeble, C.
Bekaert, Jonas
MEURIS, Marc 
POORTMANS, Jef 
Issue Date: 2015
Publisher: ELSEVIER SCIENCE SA
Source: THIN SOLID FILMS, 582, p. 224-228
Abstract: We report on the electrical, optical and physical properties of Cu2ZnSnSe4 solar cells using an absorber layer fabricated by selenization of sputtered Cu, Zn and Cu10Sn90 multilayers. A maximum active-area conversion efficiency of 10.4% under AM1.5G was measured with a maximum short circuit current density of 39.7 mA/cm(2), an open circuit voltage of 394 mV and a fill factor of 66.4%. We perform electrical and optical characterization using photoluminescence spectroscopy, external quantum efficiency, current-voltage and admittance versus temperature measurements in order to derive information about possible causes for the low open circuit voltage values observed. The main defects derived from these measurements are strong potential fluctuations in the absorber layer as well as a potential barrier of the order of 133 meV at the back side contact. (C) 2014 Elsevier B.V. All rights reserved.
Notes: [Oueslati, S.; ElAnzeery, H.] KACST, Intel Consortium Ctr Excellence Nano Mfg Applicat, Riyadh, Saudi Arabia. [Brammertz, G.; Meuris, M.] IMEC, Div LMOMEC Partner Solliance, B-3590 Diepenbeek, Belgium. [Brammertz, G.; Meuris, M.; Poortmans, J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Oueslati, S.; Buffiere, M.; ElAnzeery, H.; Poortmans, J.] IMEC, Partner Solliance, B-3001 Leuven, Belgium. [Buffiere, M.; Poortmans, J.] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Oueslati, S.] Tunis El Manar Univ, Fac Sci Tunis, Dept Phys, Tunis, Tunisia. [ElAnzeery, H.] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Oueslati, S.; Touayar, O.] Univ Carthage, INSAT, Natl Inst Appl Sci & Technol, Res Lab MMA, Carthage, Tunisia. [Koeble, C.] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany. [Bekaert, J.] Univ Antwerp, Dept Phys, Condensed Matter Theory Grp, B-2020 Antwerp, Belgium.
Keywords: thin film; Cu2ZnSnSe4; solar cell characterization; deep defects;Thin film; Cu2ZnSnSe4; Solar cell characterization; Deep defects
Document URI: http://hdl.handle.net/1942/18839
ISSN: 0040-6090
e-ISSN: 1879-2731
DOI: 10.1016/j.tsf.2014.10.052
ISI #: 000352225900048
Rights: © 2014 Elsevier B.V. All rights reserved.
Category: A1
Type: Journal Contribution
Validations: ecoom 2016
Appears in Collections:Research publications

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