Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18848
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dc.contributor.authorGranata, S. N.-
dc.contributor.authorBearda, Twan-
dc.contributor.authorXu, M. L.-
dc.contributor.authorAbdulraheem, Yaser-
dc.contributor.authorGORDON, Ivan-
dc.contributor.authorMertens, Robert-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2015-05-08T12:24:41Z-
dc.date.available2015-05-08T12:24:41Z-
dc.date.issued2015-
dc.identifier.citationTHIN SOLID FILMS, 579, p. 9-13-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/1942/18848-
dc.description.abstractIn the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si: H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si: H surface passivation. (C) 2015 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThe authors gratefully acknowledge the financial support from Imec's industrial affiliation program and from the KFAS funded project number (2012-150-801). The authors would also like to thank Pere Roca i Cabarrocas for illuminating discussion.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.rights© 2015 Elsevier B.V. All rights reserved.-
dc.subject.othersurface passivation; amorphous silicon; plasma potential; PECVD; heterojunctions; silicon solar cells; thin wafers-
dc.subject.otherSurface passivation; Amorphous silicon; Plasma potential; PECVD; Heterojunctions; Silicon solar cells; Thin wafers-
dc.titleInfluence of substrate potential on a-Si: H passivation of Si foils bonded to glass-
dc.typeJournal Contribution-
dc.identifier.epage13-
dc.identifier.spage9-
dc.identifier.volume579-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Granata, S. N.; Xu, M. L.; Mertens, R.; Poortmans, J.] Katholieke Univ Leuven, ESAT, B-3000 Louvain, Belgium. [Granata, S. N.; Bearda, T.; Xu, M. L.; Gordon, I.; Mertens, R.; Poortmans, J.] IMEC, B-3001 Heverlee, Belgium. [Xu, M. L.] Tech Univ Dresden, D-01069 Dresden, Germany. [Abdulraheem, Y.] Kuwait Univ, Safat 13060, Kuwait. [Poortmans, J.] Hasselt Univ, B-3500 Hasselt, Belgium.-
local.publisher.placeLAUSANNE-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.tsf.2015.02.044-
dc.identifier.isi000352219700002-
item.accessRightsRestricted Access-
item.fullcitationGranata, S. N.; Bearda, Twan; Xu, M. L.; Abdulraheem, Yaser; GORDON, Ivan; Mertens, Robert & POORTMANS, Jef (2015) Influence of substrate potential on a-Si: H passivation of Si foils bonded to glass. In: THIN SOLID FILMS, 579, p. 9-13.-
item.fulltextWith Fulltext-
item.validationecoom 2016-
item.contributorGranata, S. N.-
item.contributorBearda, Twan-
item.contributorXu, M. L.-
item.contributorAbdulraheem, Yaser-
item.contributorGORDON, Ivan-
item.contributorMertens, Robert-
item.contributorPOORTMANS, Jef-
crisitem.journal.issn0040-6090-
crisitem.journal.eissn1879-2731-
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