Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/18903
Title: | Investigation of Properties Limiting Efficiency in Cu2ZnSnSe4-Based Solar Cells | Authors: | BRAMMERTZ, Guy Oueslati, Souhaib Buffiere, Marie Bekaert, Jonas El Anzeery, Hossam Ben Messaoud, Khaled Sahayaraj, Sylvester Nuytten, Thomas Koeble, Christine MEURIS, Marc Poortmans, Jozef |
Issue Date: | 2015 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Source: | IEEE Journal of Photovoltaics, 5 (2), p. 649-655 | Abstract: | We have investigated different nonidealities in Cu2ZnSnSe4-CdS-ZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorber-buffer heterojunction leading to a strong crossover behavior between dark and illuminated current-voltage curves. In addition, a barrier of about 130 meV is present at the Mo-absorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects. | Notes: | [Brammertz, Guy; Oueslati, Souhaib; El Anzeery, Hossam; Ben Messaoud, Khaled; Sahayaraj, Sylvester; Meuris, Marc] IMEC Div IMOMEC, B-3590 Diepenbeek, Belgium. [Brammertz, Guy; Oueslati, Souhaib; El Anzeery, Hossam; Ben Messaoud, Khaled; Sahayaraj, Sylvester; Meuris, Marc] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Oueslati, Souhaib; El Anzeery, Hossam; Ben Messaoud, Khaled] KACST, Intel Consortium Ctr Excellence Nanomfg Applicat, Riyadh, Saudi Arabia. [Oueslati, Souhaib; Ben Messaoud, Khaled] Univ Tunis El Manar, Fac Sci Tunis, Tunis 2092, Tunisia. [Buffiere, Marie; Nuytten, Thomas; Poortmans, Jozef] IMEC, B-3001 Leuven, Belgium. [Buffiere, Marie; Poortmans, Jozef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Bekaert, Jonas] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium. [El Anzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Koeble, Christine] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany. | Keywords: | admittance spectroscopy; Cu2 ZnSnSe4 (CZTSe); Cu2ZnSnSe4 (CZTSe); defect; kesterite; solar cell;Admittance spectroscopy; Cu2ZnSnSe4 (CZTSe); defect; kesterite; solar cell | Document URI: | http://hdl.handle.net/1942/18903 | ISSN: | 2156-3381 | e-ISSN: | 2156-3403 | DOI: | 10.1109/JPHOTOV.2014.2376053 | ISI #: | 000353524800026 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2016 |
Appears in Collections: | Research publications |
Show full item record
SCOPUSTM
Citations
14
checked on Sep 2, 2020
WEB OF SCIENCETM
Citations
19
checked on Oct 6, 2024
Page view(s)
74
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.