Please use this identifier to cite or link to this item:
|Title:||Improvement on electrical conductivity and electron field emission properties of Au-ion implanted ultrananocrystalline diamond films by using Au-Si eutectic substrates||Authors:||KAMATCHI JOTHIRAMALINGAM, Sankaran
Tai, N. H.
Lin, I. N.
|Issue Date:||2015||Publisher:||AMER INST PHYSICS||Source:||JOURNAL OF APPLIED PHYSICS, 118 (8)||Abstract:||In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Omega cm)(-1), and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/mu m with high EFE current density of 5.3 mA/cm(2) (at an applied field of 4.9 V/mu m) for the Au-UNCD films. The formation of SiC phase circumvents the formation of amorphous carbon prior to the nucleation of diamond on Si substrates. Consequently, the electron transport efficiency of the UNCD-to-Si interface increases, thereby improving the conductivity as well as the EFE properties. Moreover, the salient feature of these processes is that the sputtering deposition of Au-coating for preparing the Au-Si interlayer, the microwave plasma enhanced chemical vapor deposition process for growing the UNCD films, and the Au-ion implantation process for inducing the nanographitic phases are standard thin film preparation techniques, which are simple, robust, and easily scalable. The availability of these highly conducting UNCD films with superior EFE characteristics may open up a pathway for the development of high-definition flat panel displays and plasma devices. (C) 2015 AIP Publishing LLC.||Notes:||[Sankaran, K. J.; Tai, N. H.] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan. [Sankaran, K. J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Sundaravel, B.] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India. [Lin, I. N.] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan.||Document URI:||http://hdl.handle.net/1942/19681||ISSN:||0021-8979||e-ISSN:||1089-7550||DOI:||10.1063/1.4929431||ISI #:||000360658600038||Rights:||© 2015 AIP Publishing LLC||Category:||A1||Type:||Journal Contribution||Validations:||ecoom 2016|
|Appears in Collections:||Research publications|
Show full item record
Files in This Item:
|7. JAP, Au-UNCD-Au(Si).pdf|
|2.58 MB||Adobe PDF||View/Open Request a copy|
checked on Sep 2, 2020
WEB OF SCIENCETM
checked on May 13, 2022
checked on May 19, 2022
checked on May 19, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.