Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/19750
Title: Structural, hydrogen bonding and in situ studies of the effect of hydrogen dilution on the passivation by amorphous silicon of n-type crystalline (100) silicon surfaces
Authors: Meddeb, H.
Bearda, Twan
Abdelraheem, Y.
Ezzaouia, H.
GORDON, Ivan 
Szlufcik, J.
POORTMANS, Jef 
Issue Date: 2015
Publisher: IOP PUBLISHING LTD
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48 (41)
Abstract: Hydrogenated amorphous silicon (a-Si : H) layers deposited by chemical vapour deposition provide an attractive route to achieve high-performance crystalline silicon (c-Si) solar cells due to their deposition at low temperatures and their superior passivation quality. Hydrogen certainly plays an additional crucial role by passivating the dangling bonds, and thus improving the electrical and optical properties. In this work, we present the variation of the effective lifetime with the hydrogen dilution ratio R = (H-2/SiH4). We find that at lower hydrogen dilution rates (R < 2), the polymerization reaction of silane molecules in the plasma bulk as well as the excess of dihydride (Si-H-2) incorporation in as-deposited layers result in higher microvoid density and worse passivation quality. In contrast, the deposition at higher hydrogen dilution rates (R > 5) leads to a degradation in the film quality with very low hydrogen content and crystalline epitaxial growth at the a-Si/c-Si interface. Thus, the best material quality is obtained just below the onset of amorphous-to crystalline transition (R = 3), which favours further improvement of the passivation during a post-deposition annealing.
Notes: [Meddeb, H.; Bearda, T.; Gordon, I.; Szlufcik, J.; Poortmans, J.] IMEC, B-3001 Leuven, Belgium. [Meddeb, H.] KACST Intel Consortium Ctr Excellence Nanomfg App, Riyadh, Saudi Arabia. [Meddeb, H.] Univ Carthage, Fac Sci Bizerte, Carthage, Tunisia. [Abdelraheem, Y.] Kuwait Univ, Coll Engn & Petr, Dept Elect Engn, Safat 13060, Kuwait. [Poortmans, J.] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Leuven, Belgium. [Poortmans, J.] Univ Hasselt, Fac Sci, B-3500 Hasselt, Belgium.
Keywords: intrinsic amorphous silicon; passivation; hydrogen dilution; epitaxial growth; hydrogen bonding; in situ plasma diagnostics;intrinsic amorphous silicon; passivation; hydrogen dilution; epitaxial growth; hydrogen bonding; in situ plasma diagnostics
Document URI: http://hdl.handle.net/1942/19750
ISSN: 0022-3727
e-ISSN: 1361-6463
DOI: 10.1088/0022-3727/48/41/415301
ISI #: 000362007100010
Rights: © 2015 IOP Publishing Ltd
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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