Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/19825
Title: | Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se-2 solar cells | Authors: | Ben Messaoud, Khaled Buffiere, Marie BRAMMERTZ, Guy ElAnzeery, Hossam Oueslati, Souhaib Hamon, Jonathan Kniknie, Bas J. MEURIS, Marc Amlouk, Mosbah POORTMANS, Jef |
Issue Date: | 2015 | Publisher: | WILEY-BLACKWELL | Source: | PROGRESS IN PHOTOVOLTAICS, 23 (11), p. 1608-1620 | Abstract: | The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu2ZnSnSe4 (CZTSe) thin-film solar cells, by using a Cd2+ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se-2 (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7min at 70 degrees C using a basic solution of cadmium acetate. X-ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density-voltage (J-V), external quantum efficiency, and drive-level capacitance profiling measurements. For the CZTSe-based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency () from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (R-S) of the dark and light J-V, as determined using the one-diode model. The crossover effect between dark and light J-V curves is also significantly reduced by Cd PE treatment. Copyright (c) 2015 John Wiley & Sons, Ltd. | Notes: | [Ben Messaoud, Khaled; ElAnzeery, Hossam; Oueslati, Souhaib] KACST Intel Consortium Ctr Excellence Nanomfg App, Riyadh, Saudi Arabia. [Ben Messaoud, Khaled; Brammertz, Guy; ElAnzeery, Hossam; Oueslati, Souhaib; Meuris, Marc] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Ben Messaoud, Khaled; Brammertz, Guy; Oueslati, Souhaib; Meuris, Marc] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Ben Messaoud, Khaled; Amlouk, Mosbah] Univ Tunis El Manar, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia. [Amlouk, Mosbah] Univ Carthage, Fac Sci Bizerte, Dept Phys, Bizerte 7021, Tunisia. [Buffiere, Marie; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Buffiere, Marie; Poortmans, Jef] IMEC, B-3001 Louvain, Belgium. [ElAnzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Hamon, Jonathan] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France. [Kniknie, Bas J.] TNO, NL-5656 AE Eindhoven, Netherlands. [Oueslati, Souhaib] Univ Tunis El Manar, Fac Sci Tunis, Tunis 2092, Tunisia. | Keywords: | CZTSe; CdS heterojunction; CIGSe; CdS heterojunction; Cd PE treatment; interface recombination; kesterite; chalcopyrite;CZTSe/CdS heterojunction; CIGSe/CdS heterojunction; Cd PE treatment; interface recombination; kesterite; chalcopyrite | Document URI: | http://hdl.handle.net/1942/19825 | ISSN: | 1062-7995 | e-ISSN: | 1099-159X | DOI: | 10.1002/pip.2599 | ISI #: | 000362796500017 | Rights: | Copyright © 2015 John Wiley & Sons, Ltd. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2016 |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
messaoud 1.pdf Restricted Access | Published version | 4.55 MB | Adobe PDF | View/Open Request a copy |
SCOPUSTM
Citations
24
checked on Sep 2, 2020
WEB OF SCIENCETM
Citations
27
checked on Oct 12, 2024
Page view(s)
90
checked on Sep 6, 2022
Download(s)
74
checked on Sep 6, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.