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Title: | Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se-2 solar cells | Authors: | Ben Messaoud, Khaled Buffiere, Marie BRAMMERTZ, Guy ElAnzeery, Hossam Oueslati, Souhaib Hamon, Jonathan Kniknie, Bas J. MEURIS, Marc Amlouk, Mosbah POORTMANS, Jef |
Issue Date: | 2015 | Publisher: | WILEY-BLACKWELL | Source: | PROGRESS IN PHOTOVOLTAICS, 23 (11), p. 1608-1620 | Abstract: | The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu2ZnSnSe4 (CZTSe) thin-film solar cells, by using a Cd2+ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se-2 (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7min at 70 degrees C using a basic solution of cadmium acetate. X-ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density-voltage (J-V), external quantum efficiency, and drive-level capacitance profiling measurements. For the CZTSe-based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency () from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (R-S) of the dark and light J-V, as determined using the one-diode model. The crossover effect between dark and light J-V curves is also significantly reduced by Cd PE treatment. Copyright (c) 2015 John Wiley & Sons, Ltd. | Notes: | [Ben Messaoud, Khaled; ElAnzeery, Hossam; Oueslati, Souhaib] KACST Intel Consortium Ctr Excellence Nanomfg App, Riyadh, Saudi Arabia. [Ben Messaoud, Khaled; Brammertz, Guy; ElAnzeery, Hossam; Oueslati, Souhaib; Meuris, Marc] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Ben Messaoud, Khaled; Brammertz, Guy; Oueslati, Souhaib; Meuris, Marc] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Ben Messaoud, Khaled; Amlouk, Mosbah] Univ Tunis El Manar, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia. [Amlouk, Mosbah] Univ Carthage, Fac Sci Bizerte, Dept Phys, Bizerte 7021, Tunisia. [Buffiere, Marie; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Buffiere, Marie; Poortmans, Jef] IMEC, B-3001 Louvain, Belgium. [ElAnzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Hamon, Jonathan] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France. [Kniknie, Bas J.] TNO, NL-5656 AE Eindhoven, Netherlands. [Oueslati, Souhaib] Univ Tunis El Manar, Fac Sci Tunis, Tunis 2092, Tunisia. | Keywords: | CZTSe; CdS heterojunction; CIGSe; CdS heterojunction; Cd PE treatment; interface recombination; kesterite; chalcopyrite;CZTSe/CdS heterojunction; CIGSe/CdS heterojunction; Cd PE treatment; interface recombination; kesterite; chalcopyrite | Document URI: | http://hdl.handle.net/1942/19825 | ISSN: | 1062-7995 | e-ISSN: | 1099-159X | DOI: | 10.1002/pip.2599 | ISI #: | 000362796500017 | Rights: | Copyright © 2015 John Wiley & Sons, Ltd. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2016 |
Appears in Collections: | Research publications |
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