Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/21566
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dc.contributor.authorDEGUTIS, Giedrius-
dc.contributor.authorPOBEDINSKAS, Paulius-
dc.contributor.authorTURNER, Stuart-
dc.contributor.authorLu, Y. -G.-
dc.contributor.authorAl Riyami, S.-
dc.contributor.authorRUTTENS, Bart-
dc.contributor.authorYoshitake, T.-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorVerbeeck, J.-
dc.contributor.authorHARDY, An-
dc.contributor.authorVAN BAEL, Marlies-
dc.date.accessioned2016-06-27T14:33:28Z-
dc.date.available2016-06-27T14:33:28Z-
dc.date.issued2016-
dc.identifier.citationDIAMOND AND RELATED MATERIALS, 64, p. 163-168-
dc.identifier.issn0925-9635-
dc.identifier.urihttp://hdl.handle.net/1942/21566-
dc.description.abstractThis work presents a morphological and structural analysis of CVD diamond growth on silicon from nanodiamond seeds covered by a 50 nm thick chromium layer. The role of carbon diffusion as well as chromium and carbon silicide formation is analyzed. The local diamond environment is investigated by scanning transmission electron microscopy in combination with electron energy-loss spectroscopy. The evolution of the diamond phase composition (sp(3)/sp(2)) is evaluated by micro-Raman spectroscopy. Raman and X-ray diffraction analysis are used to identify the interfacial phases formed during CVD growth. Based upon the observed morphological and structural evolution, a diamond growth model from nanodiamond seeds buried beneath a thin Cr layer is proposed. (C) 2016 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThe authors acknowledge financial support provided by Research Program FWO G.056.810 and G0044.13N. A.H. and M.K.V.B are grateful to Hercules Foundation Flanders for financial support. P.P. and S.T. are Postdoctoral Fellows of the Research Foundation - Flanders (FWO). The Titan microscope used for this work was partially funded by the Hercules Foundation.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.rights© 2016 Elsevier B.V. All rights reserved.-
dc.subject.otherCVD diamond; Cr diffusion; Cr carburization; Si-Cr interface-
dc.subject.otherCVD diamond; Cr diffusion; Cr carburization; Si-Cr interface-
dc.titleCVD diamond growth from nanodiamond seeds buried under a thin chromium layer-
dc.typeJournal Contribution-
dc.identifier.epage168-
dc.identifier.spage163-
dc.identifier.volume64-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notes[Degutis, G.; Pobedinskas, P.; Al Riyami, S.; Haenen, K.; Hardy, A.; Van Bael, M. K.] Hasselt Univ, Inst Mat Res IMO, B-3500 Hasselt, Belgium. [Pobedinskas, P.; Ruttens, B.; D'Haen, J.; Haenen, K.; Hardy, A.; Van Bael, M. K.] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. [Turner, S.; Lu, Y. -G.; Verbeeck, J.] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium. [Lu, Y. -G.; Al Riyami, S.; Yoshitake, T.] Univ N Carolina, Dept Mech Engn & Engn Sci, Charlotte, NC 28223 USA. [Lu, Y. -G.; Al Riyami, S.; Yoshitake, T.] Kyushu Univ, 6-1 Kasuga, Fukuoka 8168580, Japan. [Al Riyami, S.] German Univ Technol Oman, Barka, Oman.-
local.publisher.placeLAUSANNE-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.diamond.2016.02.013-
dc.identifier.isi000374608100020-
item.validationecoom 2017-
item.contributorDEGUTIS, Giedrius-
item.contributorPOBEDINSKAS, Paulius-
item.contributorTURNER, Stuart-
item.contributorLu, Y. -G.-
item.contributorAl Riyami, S.-
item.contributorRUTTENS, Bart-
item.contributorYoshitake, T.-
item.contributorD'HAEN, Jan-
item.contributorHAENEN, Ken-
item.contributorVerbeeck, J.-
item.contributorHARDY, An-
item.contributorVAN BAEL, Marlies-
item.accessRightsRestricted Access-
item.fullcitationDEGUTIS, Giedrius; POBEDINSKAS, Paulius; TURNER, Stuart; Lu, Y. -G.; Al Riyami, S.; RUTTENS, Bart; Yoshitake, T.; D'HAEN, Jan; HAENEN, Ken; Verbeeck, J.; HARDY, An & VAN BAEL, Marlies (2016) CVD diamond growth from nanodiamond seeds buried under a thin chromium layer. In: DIAMOND AND RELATED MATERIALS, 64, p. 163-168.-
item.fulltextWith Fulltext-
crisitem.journal.issn0925-9635-
crisitem.journal.eissn1879-0062-
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