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http://hdl.handle.net/1942/21713
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DC Field | Value | Language |
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dc.contributor.author | Chen, Jia | - |
dc.contributor.author | Deckers, Jan | - |
dc.contributor.author | CHOULAT, Patrick | - |
dc.contributor.author | Kuzma-Filipek, Izabela | - |
dc.contributor.author | Aleman, Monica | - |
dc.contributor.author | De Castro, Angel Uruena | - |
dc.contributor.author | Du, Zhe Ren | - |
dc.contributor.author | DUERINCKX, Filip | - |
dc.contributor.author | Hoex, Bram | - |
dc.contributor.author | Szlufcik, Jozef | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.contributor.author | Aberle, Armin G. | - |
dc.date.accessioned | 2016-07-12T12:04:04Z | - |
dc.date.available | 2016-07-12T12:04:04Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | PROGRESS IN PHOTOVOLTAICS, 23 (12), p. 1706-1714 | - |
dc.identifier.issn | 1062-7995 | - |
dc.identifier.uri | http://hdl.handle.net/1942/21713 | - |
dc.description.abstract | n-type silicon wafer solar cells are receiving increasing attention for industrial application in recent years, such as the n-type rear-junction Passivated Emitter Rear Totally-diffused (PERT) solar cells. One of the main challenges in fabricating the n-PERT solar cells is the opening of the rear dielectric for localized contacts. In this work laser ablation is applied to locally ablate the rear dielectric. We investigate the laser damage to the emitter at the laser-ablated regions using the emitter saturation current density, J(0e,laser),, laser, extracted by two approaches. J(0e), laser is observed to be injection dependent due to high J(02) recombination caused by laser damage to the space charge region. By using the optimized laser ablation parameters, n-PERT solar cells with an efficiency of up to 21.0% are realized. Copyright (C) 2015 John Wiley & Sons, Ltd. | - |
dc.description.sponsorship | The authors gratefully acknowledge the financial support of Imec's Industrial Affiliation Program for Photovoltaics (IIAP-PV). The Solar Energy Research Institute of Singapore (SERIS) is sponsored by the National University of Singapore (NUS) and Singapore's National Research Foundation (NRF) through the Singapore Economic Development Board (EDB). | - |
dc.language.iso | en | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.rights | Copyright © 2015 John Wiley & Sons, Ltd. | - |
dc.subject.other | solar cell; laser ablation; laser damage | - |
dc.subject.other | solar cell; laser ablation; laser damage | - |
dc.title | Investigation of laser ablation on boron emitters for n-type rear-junction PERT type silicon wafer solar cells | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 1714 | - |
dc.identifier.issue | 12 | - |
dc.identifier.spage | 1706 | - |
dc.identifier.volume | 23 | - |
local.format.pages | 9 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Chen, Jia; Du, Zhe Ren; Hoex, Bram; Aberle, Armin G.] Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117574, Singapore. [Chen, Jia; Aberle, Armin G.] Natl Univ Singapore, Grad Sch Integrat Sci & Engn, Singapore 117574, Singapore. [Du, Zhe Ren; Aberle, Armin G.] Natl Univ Singapore, Elect & Comp Engn, Singapore 117574, Singapore. [Chen, Jia; Deckers, Jan; Choulat, Patrick; Kuzma-Filipek, Izabela; Aleman, Monica; De Castro, Angel Uruena; Duerinckx, Filip; Szlufcik, Jozef; Poortmans, Jef] IMEC, B-3001 Heverlee, Belgium. [Chen, Jia; Deckers, Jan; Poortmans, Jef] Katholieke Univ Leuven, B-3001 Heverlee, Belgium. [Poortmans, Jef] Univ Hasselt, B-3590 Diepenbeek, Hasselt, Belgium. | - |
local.publisher.place | HOBOKEN | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1002/pip.2604 | - |
dc.identifier.isi | 000368369400003 | - |
item.validation | ecoom 2017 | - |
item.accessRights | Restricted Access | - |
item.fullcitation | Chen, Jia; Deckers, Jan; CHOULAT, Patrick; Kuzma-Filipek, Izabela; Aleman, Monica; De Castro, Angel Uruena; Du, Zhe Ren; DUERINCKX, Filip; Hoex, Bram; Szlufcik, Jozef; POORTMANS, Jef & Aberle, Armin G. (2015) Investigation of laser ablation on boron emitters for n-type rear-junction PERT type silicon wafer solar cells. In: PROGRESS IN PHOTOVOLTAICS, 23 (12), p. 1706-1714. | - |
item.fulltext | With Fulltext | - |
item.contributor | Chen, Jia | - |
item.contributor | Deckers, Jan | - |
item.contributor | CHOULAT, Patrick | - |
item.contributor | Kuzma-Filipek, Izabela | - |
item.contributor | Aleman, Monica | - |
item.contributor | De Castro, Angel Uruena | - |
item.contributor | Du, Zhe Ren | - |
item.contributor | DUERINCKX, Filip | - |
item.contributor | Hoex, Bram | - |
item.contributor | Szlufcik, Jozef | - |
item.contributor | POORTMANS, Jef | - |
item.contributor | Aberle, Armin G. | - |
crisitem.journal.issn | 1062-7995 | - |
crisitem.journal.eissn | 1099-159X | - |
Appears in Collections: | Research publications |
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chen 1.pdf Restricted Access | Published version | 980.82 kB | Adobe PDF | View/Open Request a copy |
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