Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/22038
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dc.contributor.authorBALASUBRAMANIAM, Yaso-
dc.contributor.authorPOBEDINSKAS, Paulius-
dc.contributor.authorJANSSENS, Stoffel-
dc.contributor.authorSakr, G.-
dc.contributor.authorJomard, F.-
dc.contributor.authorTURNER, Stuart-
dc.contributor.authorLu, Y.-G.-
dc.contributor.authorDEXTERS, Wim-
dc.contributor.authorSoltani, A.-
dc.contributor.authorVerbeeck, J.-
dc.contributor.authorBarjon, J.-
dc.contributor.authorNESLADEK, Milos-
dc.contributor.authorHAENEN, Ken-
dc.date.accessioned2016-09-15T13:09:29Z-
dc.date.available2016-09-15T13:09:29Z-
dc.date.issued2016-
dc.identifier.citationApplied physics letters, 109(6) (Art N° 062105)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/22038-
dc.description.abstractThe fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm/h. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10^16 cm−3 phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.-
dc.description.sponsorshipThis work was financially supported by the EU through the FP7 Collaborative Project “DIAMANT,” the “H2020 Research and Innovation Action Project” “GreenDiamond” (No. 640947), and the Research Foundation-Flanders (FWO) (Nos. G.0C02.15N and VS.024.16N). J.V. acknowledges funding from the “Geconcentreerde Onderzoekacties” (GOA) project “Solarpaint” of the University of Antwerp. The TEM instrument was partly funded by the Hercules fund from the Flemish Government. We particularly thank Dr. J. E. Butler (Naval Research Laboratory, USA) for the sample preparation by laser slicing for TEM analysis, Dr. J. Pernot (Universite Grenoble Alpes/CNRS-Institut Neel, France) for helpful discussions, Ms. C. Vilar (Universite de Versailles St. Quentin en Yvelines, France) for technical help on SEMCL experiments, and Dr. S. S. Nicley (Hasselt University, Belgium) for improving the language of the text. P.P. and S.T. are Postdoctoral Fellows of the Research FoundationFlanders (FWO).-
dc.language.isoen-
dc.subject.otherdiamond; P-doping; CVD-
dc.titleThick homoepitaxial (110)-oriented phosphorus-doped n-type diamond-
dc.typeJournal Contribution-
dc.identifier.issue6-
dc.identifier.volume109-
local.format.pages4-
local.bibliographicCitation.jcatA1-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr062105-
local.type.programmeH2020-
local.relation.h2020640947-
dc.identifier.doi10.1063/1.4960970-
dc.identifier.isi000383183600025-
item.contributorBALASUBRAMANIAM, Yaso-
item.contributorPOBEDINSKAS, Paulius-
item.contributorJANSSENS, Stoffel-
item.contributorSakr, G.-
item.contributorJomard, F.-
item.contributorTURNER, Stuart-
item.contributorLu, Y.-G.-
item.contributorDEXTERS, Wim-
item.contributorSoltani, A.-
item.contributorVerbeeck, J.-
item.contributorBarjon, J.-
item.contributorNESLADEK, Milos-
item.contributorHAENEN, Ken-
item.fullcitationBALASUBRAMANIAM, Yaso; POBEDINSKAS, Paulius; JANSSENS, Stoffel; Sakr, G.; Jomard, F.; TURNER, Stuart; Lu, Y.-G.; DEXTERS, Wim; Soltani, A.; Verbeeck, J.; Barjon, J.; NESLADEK, Milos & HAENEN, Ken (2016) Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond. In: Applied physics letters, 109(6) (Art N° 062105).-
item.accessRightsRestricted Access-
item.fulltextWith Fulltext-
item.validationecoom 2017-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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