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http://hdl.handle.net/1942/22052
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DC Field | Value | Language |
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dc.contributor.author | HOANG, Quang | - |
dc.contributor.author | POBEDINSKAS, Paulius | - |
dc.contributor.author | NICLEY, Shannon | - |
dc.contributor.author | TURNER, Stuart | - |
dc.contributor.author | JANSSENS, Stoffel | - |
dc.contributor.author | VAN BAEL, Marlies | - |
dc.contributor.author | D'HAEN, Jan | - |
dc.contributor.author | HAENEN, Ken | - |
dc.date.accessioned | 2016-09-19T12:08:22Z | - |
dc.date.available | 2016-09-19T12:08:22Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | CRYSTAL GROWTH & DESIGN, 16(7), p. 3699-3708 | - |
dc.identifier.issn | 1528-7483 | - |
dc.identifier.uri | http://hdl.handle.net/1942/22052 | - |
dc.description.abstract | Hexagonal boron nitride nanowall thin films were deposited on Si(100) substrates using a Ar(51%)/N-2(44%)/H-2(5%) gas mixture by unbalanced radio frequency sputtering. The effects of various target-to-substrate distances, substrate temperatures, and substrate tilting angles were investigated. When the substrate is close to the target, hydrogen etching plays a significant role in the film growth, while the effect is negligible for films deposited at a farther distance. The relative quantity of defects was measured by a non-destructive infrared spectroscopy technique that characterized the hydrogen incorporation at dangling nitrogen bonds at defect sites in the deposited films. Despite the films deposited at different substrate tilting angles, the nanowalls of those films were found to consistently grow vertical to the substrate surface, independent of the tilting angle. This implies that chemical processes, rather than physical ones, govern the growth of the nanowalls. The results also reveal that the degree of nanowall crystallization is tunable by varying the growth parameters. Finally, evidence of hydrogen desorption during vacuum annealing is given based on measurements of infrared stretching (E-1u) and bending (A(2u)) modes of the optical phonons, and the H-N vibration mode. | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.rights | © 2016 American Chemical Society | - |
dc.title | Elucidation of the Growth Mechanism of Sputtered 2D Hexagonal Boron Nitride Nanowalls | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 3708 | - |
dc.identifier.issue | 7 | - |
dc.identifier.spage | 3699 | - |
dc.identifier.volume | 16 | - |
local.format.pages | 10 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Hoang, Duc-Quang; Pobedinskas, Paulius; Nicley, Shannon S.; Janssens, Stoffel D.; Van Bael, Marlies K.; D'Haen, Jan; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Hoang, Duc-Quang; Pobedinskas, Paulius; Nicley, Shannon S.; Janssens, Stoffel D.; Van Bael, Marlies K.; D'Haen, Jan; Haenen, Ken] IMEC Vzw, IMOMEC, B-3590 Diepenbeek, Belgium. [Turner, Stuart] Univ Antwerp, Electron Microscopy Mat Sci, B-2000 Antwerp, Belgium. | - |
local.publisher.place | WASHINGTON | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1021/acs.cgd.6b00191 | - |
dc.identifier.isi | 000379456700020 | - |
item.fullcitation | HOANG, Quang; POBEDINSKAS, Paulius; NICLEY, Shannon; TURNER, Stuart; JANSSENS, Stoffel; VAN BAEL, Marlies; D'HAEN, Jan & HAENEN, Ken (2016) Elucidation of the Growth Mechanism of Sputtered 2D Hexagonal Boron Nitride Nanowalls. In: CRYSTAL GROWTH & DESIGN, 16(7), p. 3699-3708. | - |
item.fulltext | With Fulltext | - |
item.validation | ecoom 2017 | - |
item.contributor | HOANG, Quang | - |
item.contributor | POBEDINSKAS, Paulius | - |
item.contributor | NICLEY, Shannon | - |
item.contributor | TURNER, Stuart | - |
item.contributor | JANSSENS, Stoffel | - |
item.contributor | VAN BAEL, Marlies | - |
item.contributor | D'HAEN, Jan | - |
item.contributor | HAENEN, Ken | - |
item.accessRights | Restricted Access | - |
crisitem.journal.issn | 1528-7483 | - |
crisitem.journal.eissn | 1528-7505 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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acs%2Ecgd%2E6b00191.pdf Restricted Access | Published version | 9.93 MB | Adobe PDF | View/Open Request a copy |
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