Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/22550
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | KAMATCHI JOTHIRAMALINGAM, Sankaran | - |
dc.contributor.author | HOANG, Quang | - |
dc.contributor.author | Kunuku, Srinivasu | - |
dc.contributor.author | Korneychuk, Svetlana | - |
dc.contributor.author | TURNER, Stuart | - |
dc.contributor.author | POBEDINSKAS, Paulius | - |
dc.contributor.author | DRIJKONINGEN, Sien | - |
dc.contributor.author | VAN BAEL, Marlies | - |
dc.contributor.author | D'HAEN, Jan | - |
dc.contributor.author | Verbeeck, Johan | - |
dc.contributor.author | Leou, Keh-Chyang | - |
dc.contributor.author | Lin, I-Nan | - |
dc.contributor.author | HAENEN, Ken | - |
dc.date.accessioned | 2016-11-09T10:01:16Z | - |
dc.date.available | 2016-11-09T10:01:16Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, 6 (ART N° 29444) | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/1942/22550 | - |
dc.description.abstract | Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/mu m, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/mu m with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission. | - |
dc.description.sponsorship | The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Project G.0456.12, G0044.13N and the Methusalem "NANO" network. Kamatchi Jothiramalingam Sankaran, Stuart Turner, and Paulius Pobedinskas are Postdoctoral Fellows of the Research Foundations Flanders (FWO). | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.rights | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ | - |
dc.title | Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures | - |
dc.type | Journal Contribution | - |
dc.identifier.volume | 6 | - |
local.format.pages | 11 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K.; D'Haen, Jan; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K.; D'Haen, Jan; Haenen, Ken] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. [Kunuku, Srinivasu; Leou, Keh-Chyang] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan. [Korneychuk, Svetlana; Turner, Stuart; Verbeeck, Johan] Univ Antwerp, Electron Microscopy Mat Sci EMAT, B-2020 Antwerp, Belgium. [Lin, I-Nan] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan. | - |
local.publisher.place | London | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.bibliographicCitation.artnr | 29444 | - |
dc.identifier.doi | 10.1038/srep29444 | - |
dc.identifier.isi | 000379391000001 | - |
item.fulltext | With Fulltext | - |
item.contributor | KAMATCHI JOTHIRAMALINGAM, Sankaran | - |
item.contributor | HOANG, Quang | - |
item.contributor | Kunuku, Srinivasu | - |
item.contributor | Korneychuk, Svetlana | - |
item.contributor | TURNER, Stuart | - |
item.contributor | POBEDINSKAS, Paulius | - |
item.contributor | DRIJKONINGEN, Sien | - |
item.contributor | VAN BAEL, Marlies | - |
item.contributor | D'HAEN, Jan | - |
item.contributor | Verbeeck, Johan | - |
item.contributor | Leou, Keh-Chyang | - |
item.contributor | Lin, I-Nan | - |
item.contributor | HAENEN, Ken | - |
item.validation | ecoom 2017 | - |
item.fullcitation | KAMATCHI JOTHIRAMALINGAM, Sankaran; HOANG, Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; TURNER, Stuart; POBEDINSKAS, Paulius; DRIJKONINGEN, Sien; VAN BAEL, Marlies; D'HAEN, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I-Nan & HAENEN, Ken (2016) Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures. In: SCIENTIFIC REPORTS, 6 (ART N° 29444). | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 2045-2322 | - |
crisitem.journal.eissn | 2045-2322 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
sankaran 1.pdf | Published version | 1.58 MB | Adobe PDF | View/Open |
SCOPUSTM
Citations
10
checked on Sep 2, 2020
WEB OF SCIENCETM
Citations
17
checked on Oct 14, 2024
Page view(s)
60
checked on Sep 7, 2022
Download(s)
98
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.