Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/22694
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dc.contributor.authorKAMATCHI JOTHIRAMALINGAM, Sankaran-
dc.contributor.authorManoharan, D.-
dc.contributor.authorSundaravel, B.-
dc.contributor.authorLin, I. N.-
dc.date.accessioned2016-11-22T13:16:40Z-
dc.date.available2016-11-22T13:16:40Z-
dc.date.issued2016-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 109(10), p. 41-45 (Art N° 101603)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/22694-
dc.description.abstractMultienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Omega cm)(-1) and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/mu m, high current density of 5.4 mA/cm(2) (@ 2.65 V/mu m), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films. Published by AIP Publishing.-
dc.description.sponsorshipThe authors would like to thank the financial support of Ministry of Science and Technology, Taiwan through the Project Nos. MOST 104-2112-M-032-003. K. J. Sankaran is a Postdoctoral Research Fellow of the Research Foundations-Flanders (FWO).-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleMultienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates-
dc.typeJournal Contribution-
dc.identifier.epage45-
dc.identifier.issue10-
dc.identifier.spage41-
dc.identifier.volume109-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Sankaran, K. J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Sankaran, K. J.] IMOMEC, IMEC VZW, B-3590 Diepenbeek, Belgium. [Manoharan, D.; Lin, I. N.] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan. [Sundaravel, B.] Mat Sci Grp, Indira Gandhi Ctr Atom Res, Kalpakkam 603102, Tamil Nadu, India.-
local.publisher.placeMELVILLE-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr101603-
dc.identifier.doi10.1063/1.4962537-
dc.identifier.isi000384402900007-
item.validationecoom 2017-
item.contributorKAMATCHI JOTHIRAMALINGAM, Sankaran-
item.contributorManoharan, D.-
item.contributorSundaravel, B.-
item.contributorLin, I. N.-
item.fullcitationKAMATCHI JOTHIRAMALINGAM, Sankaran; Manoharan, D.; Sundaravel, B. & Lin, I. N. (2016) Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates. In: APPLIED PHYSICS LETTERS, 109(10), p. 41-45 (Art N° 101603).-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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