Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/23003
Title: Engineering the interface characteristics on the enhancement of field electron emission properties of vertically aligned hexagonal boron nitride nanowalls
Authors: KAMATCHI JOTHIRAMALINGAM, Sankaran 
HOANG, Quang 
Srinivasu, K.
Korneychuk, S.
Turner, S.
DRIJKONINGEN, Sien 
POBEDINSKAS, Paulius 
Verbeeck, J.
Leou, K. C.
Lin, I. N.
HAENEN, Ken 
Issue Date: 2016
Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213(10), p. 2654-2661
Abstract: Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride (aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability.
Notes: Sankaran, KJ (reprint author), Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. sankaran.kamatchi@uhasselt.be; ken.haenen@uhasselt.be
Keywords: diamond; field electron emission; gold; hexagonal boron nitride; nanocrystalline materials; nanostructures
Document URI: http://hdl.handle.net/1942/23003
ISSN: 1862-6300
e-ISSN: 1862-6319
DOI: 10.1002/pssa.201600233
ISI #: 000388321500017
Rights: (c) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Category: A1
Type: Journal Contribution
Validations: ecoom 2017
Appears in Collections:Research publications

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