Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/23043
Title: Optical-quality controllable wet-chemical doping of graphene through a uniform, transparent and low-roughness F4-TCNQ/MEK layer
Authors: Misseeuw, Lara
Krajewska, Aleksandra
Pasternak, Iwona
Ciuk, Tymoteusz
Strupinski, Wlodek
REEKMANS, Gunter 
ADRIAENSENS, Peter 
GELDOF, Davy 
Blockhuys, Frank
Van Vlierberghe, Sandra
Thienpont, Hugo
Dubruel, Peter
Vermeulen, Nathalie
Issue Date: 2016
Publisher: ROYAL SOC CHEMISTRY
Source: RSC ADVANCES, 6(106), p. 104491-104501
Abstract: Controllable chemical doping of graphene has already proven very useful for electronic applications, but when turning to optical and photonic applications, the additional requirement of having both a high transparency and a low surface roughness has, to our knowledge, not yet been fulfilled by any chemical dopant system reported so far. In this work, a new method that meets for the first time this optical-quality requirement while also providing efficient, controllable doping is presented. The method relies on F4-TCNQ dissolved in methyl ethyl ketone (MEK) yielding a uniform deposition after spin coating because of an extraordinary charge transfer interaction between the F4-TCNQ and MEK molecules. The formed F4-TCNQ/MEK layer exhibits a very high surface quality and optical transparency over the visible-infrared wavelength range between 550 and 1900 nm. By varying the dopant concentration of F4-TCNQ from 2.5 to 40 mg ml(-1) MEK, the doping effect can be controlled between Delta n - + 5.73 x 10(12) cm(-2) and + 1.09 x 10(13) cm(-2) for initially strongly p-type hydrogen- intercalated graphene grown on 6H-silicon-carbide substrates, and between Delta n = + 5.56 x 10(12) cm(-2) and + 1.04 x 10(13) cm(-2) for initially weakly p-type graphene transferred on silicon samples. This is the first time that truly optical-quality chemical doping of graphene is demonstrated, and the obtained doping values exceed those reported before for F4-TCNQ-based graphene doping by as much as 50%.
Notes: [Misseeuw, Lara; Van Vlierberghe, Sandra; Thienpont, Hugo; Vermeulen, Nathalie] Vrije Univ Brussel, Dept Appl Phys & Photon IR TONA, Brussels Photon Team B PHOT, Pleinlaan 2, B-1050 Brussels, Belgium. [Krajewska, Aleksandra] Mil Univ Technol, Inst Optoelect, Gen S Kaliskiego 2, PL-00908 Warsaw, Poland. [Krajewska, Aleksandra; Pasternak, Iwona; Ciuk, Tymoteusz; Strupinski, Wlodek; Geldof, Davy] Inst Elect Mat Technol, Wolczynska 133, PL-01919 Warsaw, Poland. [Reekmans, Gunter; Adriaensens, Peter] Hasselt Univ, Inst Mat Res IMO, Appl & Analyt Chem, Agoralaan 1-Bldg D, B-3590 Diepenbeek, Belgium. [Blockhuys, Frank; Van Vlierberghe, Sandra] Univ Antwerp, Dept Chem, Groenborgerlaan 171, B-2020 Antwerp, Belgium. [Van Vlierberghe, Sandra; Dubruel, Peter] Univ Ghent, Polymer Chem & Biomat Res Grp, Krijgslaan 281 S4 Bis, B-9000 Ghent, Belgium.
Keywords: graphene; wet-chemical doping; F4-TCNQ; MEK; ketones
Document URI: http://hdl.handle.net/1942/23043
e-ISSN: 2046-2069
DOI: 10.1039/c6ra24057g
ISI #: 000388111900075
Rights: This journal is © The Royal Society of Chemistry 2016
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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