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http://hdl.handle.net/1942/23044
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DC Field | Value | Language |
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dc.contributor.author | YAMAMOTO, Takashi | - |
dc.contributor.author | JANSSENS, Stoffel | - |
dc.contributor.author | Ohtani, Ryota | - |
dc.contributor.author | Takeuchi, Daisuke | - |
dc.contributor.author | Koizumi, Satoshi | - |
dc.date.accessioned | 2017-01-26T14:29:10Z | - |
dc.date.available | 2017-01-26T14:29:10Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, 109(18), p. 182102-1-182102-5 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/1942/23044 | - |
dc.description.abstract | The realization of low-resistance n-type diamond is required to form novel semiconducting devices. However, heavily doping with phosphorous, the most suitable electron donor, remains challenging. Here we demonstrate that the phosphorus incorporation efficiency in deposited diamond can be maximized when using the largest possible terrace width of vicinal {111}-substrates. Given step-flow-predominant crystal growth, the greater surface migration length of phosphorus-containing admolecules compared with those of carbon-containing parent species explain this. With our findings we create a model which provides a complementary perspective to explain large fluctuations in dopant incorporation efficiencies for p-type and n-type diamond. Our model can also explain conflicting models for admolecule motion responsible for diamond crystallization. | - |
dc.description.sponsorship | The authors thank Misa Yoshida for experimental support and Masahiko Ogura and Toshiharu Makino for valuable discussion. This work was partly supported by the Advanced Low Carbon (ALCA) Technology Research and Development Program Foundation, Japan Science and Technology Agency. | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.rights | Published by AIP Publishing | - |
dc.title | Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 182102-5 | - |
dc.identifier.issue | 18 | - |
dc.identifier.spage | 182102-1 | - |
dc.identifier.volume | 109 | - |
local.format.pages | 5 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Yamamoto, Takashi; Janssens, Stoffel D.; Ohtani, Ryota; Koizumi, Satoshi] NIMS, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan. [Yamamoto, Takashi; Takeuchi, Daisuke; Koizumi, Satoshi] AIST, Japan Sci & Technol Agcy JST, Adv Low Carbon Technol Res & Dev Program ALCA, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan. [Takeuchi, Daisuke] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan. [Yamamoto, Takashi] Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | - |
local.publisher.place | MELVILLE | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1063/1.4966287 | - |
dc.identifier.isi | 000387900600010 | - |
item.fulltext | With Fulltext | - |
item.accessRights | Open Access | - |
item.fullcitation | YAMAMOTO, Takashi; JANSSENS, Stoffel; Ohtani, Ryota; Takeuchi, Daisuke & Koizumi, Satoshi (2016) Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules. In: APPLIED PHYSICS LETTERS, 109(18), p. 182102-1-182102-5. | - |
item.validation | ecoom 2017 | - |
item.contributor | YAMAMOTO, Takashi | - |
item.contributor | JANSSENS, Stoffel | - |
item.contributor | Ohtani, Ryota | - |
item.contributor | Takeuchi, Daisuke | - |
item.contributor | Koizumi, Satoshi | - |
crisitem.journal.issn | 0003-6951 | - |
crisitem.journal.eissn | 1077-3118 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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Toward.pdf | Published version | 889.55 kB | Adobe PDF | View/Open |
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