Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2308
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dc.contributor.authorElmazria, O-
dc.contributor.authorMORTET, Vincent-
dc.contributor.authorEl Hakiki, M-
dc.contributor.authorNESLADEK, Milos-
dc.contributor.authorAlnot, P-
dc.date.accessioned2007-11-13T15:39:45Z-
dc.date.available2007-11-13T15:39:45Z-
dc.date.issued2003-
dc.identifier.citationIEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 50(6). p. 710-715-
dc.identifier.issn0885-3010-
dc.identifier.urihttp://hdl.handle.net/1942/2308-
dc.description.abstractHigh performances surface acoustic wave (SAW) filters based on aluminium nitride (AlN)/diamond layered structure have been fabricated. The C-axis oriented aluminum nitride films with various thicknesses were sputtered on unpolished nucleation side of free-standing polycrystalline chemical vapor deposition (CVD) diamond obtained by silicon substrate etching. Experimental results show that high order modes as well as Rayleigh waves are excited. Experimental results are in good agreement with the theoretical dispersion curves determined by software simulation with Green's function formalism. We demonstrate that high phase velocity first mode wave (so-called Sezawa wave) with high electromechanical coupling coefficient are obtained on AlN/diamond structure. This structure also has a low temperature coefficient of frequency (TCF), and preliminary results suggest that a zero TCF could be expected.-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleHigh velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond-
dc.typeJournal Contribution-
dc.identifier.epage715-
dc.identifier.issue6-
dc.identifier.spage710-
dc.identifier.volume50-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notesUniv Nancy 1, UMR 7040, Lab Phys Milieux Ionises & Applicat, F-54506 Vandoeuvre Les Nancy, France. Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium.Elmazria, O, Univ Nancy 1, UMR 7040, Lab Phys Milieux Ionises & Applicat, F-54506 Vandoeuvre Les Nancy, France.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.isi000183765700016-
dc.identifier.urlhttp://dx/doi.org/10.1109/TUFFC.2003.1209558-
item.fulltextNo Fulltext-
item.contributorElmazria, O-
item.contributorMORTET, Vincent-
item.contributorEl Hakiki, M-
item.contributorNESLADEK, Milos-
item.contributorAlnot, P-
item.accessRightsClosed Access-
item.fullcitationElmazria, O; MORTET, Vincent; El Hakiki, M; NESLADEK, Milos & Alnot, P (2003) High velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond. In: IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 50(6). p. 710-715.-
item.validationecoom 2004-
crisitem.journal.issn0885-3010-
crisitem.journal.eissn1525-8955-
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